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IRF234

  

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IRF234 [8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs ]

other parts : IRF235  IRF236  IRF237 

Intersil
Intersil

Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 8.1A and 6.5A, 275V and 250V
• rDS(ON) = 0.45Ω and 0.68Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275V, 250V DC Rated - 120V AC Line System Operation
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

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IRF234 [N-Channel MOSFET Transistor ] Iscsemi
Inchange Semiconductor

DESCRIPTION
• Drain Current ID=8.1A@ TC=25℃
• Drain Source Voltage-
   : VDSS= 250V(Min)
• Static Drain-Source On-Resistance
   : RDS(on) =0.45Ω(Max)
• Nanosecond Switching speeds

APPLICATIONS
• Switching power supplies
• Switching converters,motor driver,relay driver
• Drivers for high-power bipolar switching transistors

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