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IRFP254

  

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IRFP254_2008 [Power MOSFET ]

other parts : SIHFP254_2008  IRFP254PBF_2008  SIHFP254-E3_2008 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

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IRFP254 [Power MOSFET ]

other parts : SIHFP254  IRFP254PBF  SIHFP254-E3 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

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IRFP254PBF_2008 [Power MOSFET ]

other parts : IRFP254_2008  SIHFP254_2008  SIHFP254-E3_2008 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

View
IRFP254PBF [Power MOSFET ]

other parts : IRFP254  SIHFP254  SIHFP254-E3 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

View
IRFP254 [HEXFET® Power MOSFET ] NJSEMI
New Jersey Semiconductor

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements

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IRFP254 [N-Channel MOSFET Transistor ] Iscsemi
Inchange Semiconductor

DESCRIPTION
• Designed for use in switch mode power supplies and general
   purpose applications.

FEATURES
• Drain Current –ID= 23A@ TC=25℃
• Drain Source Voltage-
   : VDSS= 250V(Min)
• Static Drain-Source On-Resistance
   : RDS(on) = 0.14Ω(Max)
• Fast Switching

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IRFP254A [N-Channel MOSFET Transistor ] Iscsemi
Inchange Semiconductor

DESCRIPTION
• Designed for use in switch mode power supplies and general
   purpose applications.

FEATURES
• Drain Current –ID= 25A@ TC=25℃
• Drain Source Voltage-
   : VDSS= 250V(Min)
• Static Drain-Source On-Resistance
   : RDS(on) = 0.14Ω(Max)
• Fast Switching

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IRFP254 [Standard Power MOSFET ] IXYS
IXYS CORPORATION

Standard Power MOSFET

N-Channel Enhancement Mode

Features
• International standard package
   JEDEC TO-247 AD
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• High commutating dv/dt rating
• Fast switching times

Applications
• Switch-mode and resonant-mode
   power supplies
• Motor controld
• Uninterruptible Power Supplies (UPS)
• DC choppers

Advantages
• Easy to mount with 1 screw
   (isolated mounting screw hole)
• Space savings
• High power density

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IRFP254N [Power MOSFET ]

other parts : SIHFP254N  IRFP254NPBF  SIHFP254N-E3 

VISAY
Vishay Siliconix

DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that these Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fully Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

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IRFP254N [HEXFET® Power MOSFET ] IR
International Rectifier

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

● Advanced Process Technology
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Ease of Paralleling
● Simple Drive Requirements

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