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IRFP350

  

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IRFP350_2008 [Power MOSFET ]

other parts : SIHFP350_2008  IRFP350PBF_2008  SIHFP350-E3_2008 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

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IRFP350 [Power MOSFET ]

other parts : SIHFP350  IRFP350PBF  SIHFP350-E3 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

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IRFP350LC_2008 [Power MOSFET ]

other parts : SIHFP350LC_2008  IRFP350LCPBF_2008  SIHFP350LC-E3_2008 

Vishay
Vishay Semiconductors

DESCRIPTION
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of MOSFETs offer the designer a new standard in power transistors for switching applications.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30V VGS Rating
• Reduced Ciss, Coss, Crss
• Isolated Central Mounting Hole
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Lead (Pb)-free Available

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IRFP350LC [Power MOSFET ]

other parts : SIHFP350LC  IRFP350LCPBF  SIHFP350LC-E3 

Vishay
Vishay Semiconductors

DESCRIPTION
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of MOSFETs offer the designer a new standard in power transistors for switching applications.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30V VGS Rating
• Reduced Ciss, Coss, Crss
• Isolated Central Mounting Hole
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC

View
IRFP350PBF_2008 [Power MOSFET ]

other parts : IRFP350_2008  SIHFP350_2008  SIHFP350-E3_2008 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

View
IRFP350PBF [Power MOSFET ]

other parts : IRFP350  SIHFP350  SIHFP350-E3 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

View
IRFP350LCPBF_2008 [Power MOSFET ]

other parts : IRFP350LC_2008  SIHFP350LC_2008  SIHFP350LC-E3_2008 

Vishay
Vishay Semiconductors

DESCRIPTION
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of MOSFETs offer the designer a new standard in power transistors for switching applications.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30V VGS Rating
• Reduced Ciss, Coss, Crss
• Isolated Central Mounting Hole
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Lead (Pb)-free Available

View
IRFP350LCPBF [Power MOSFET ]

other parts : IRFP350LC  SIHFP350LC  SIHFP350LC-E3 

Vishay
Vishay Semiconductors

DESCRIPTION
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of MOSFETs offer the designer a new standard in power transistors for switching applications.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30V VGS Rating
• Reduced Ciss, Coss, Crss
• Isolated Central Mounting Hole
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC

View
IRFP350 [16A, 400V, 0.300 Ohm, N-Channel Power MOSFET ] Intersil
Intersil

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.

Features
• 16A, 400V
• rDS(ON) = 0.300Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

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IRFP350 [N-CHANNEL POWER MOSFETS ]

other parts : IRFP351  IRFP352  IRFP353 

Samsung
Samsung

FEATURES
● Low RDS(on)
● Improved Inducttive ruggedness
● Fast switching times
● Rugged polysilicon gate cell structure
● Low input capacitance
● Extended safe operating area
● Improved high temperature reliability
● TO-3P package

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