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IRFP350LC

  

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IRFP350LC_2008 [Power MOSFET ]

other parts : SIHFP350LC_2008  IRFP350LCPBF_2008  SIHFP350LC-E3_2008 

Vishay
Vishay Semiconductors

DESCRIPTION
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of MOSFETs offer the designer a new standard in power transistors for switching applications.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30V VGS Rating
• Reduced Ciss, Coss, Crss
• Isolated Central Mounting Hole
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Lead (Pb)-free Available

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IRFP350LC [Power MOSFET ]

other parts : SIHFP350LC  IRFP350LCPBF  SIHFP350LC-E3 

Vishay
Vishay Semiconductors

DESCRIPTION
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of MOSFETs offer the designer a new standard in power transistors for switching applications.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30V VGS Rating
• Reduced Ciss, Coss, Crss
• Isolated Central Mounting Hole
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC

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IRFP350LCPBF_2008 [Power MOSFET ]

other parts : IRFP350LC_2008  SIHFP350LC_2008  SIHFP350LC-E3_2008 

Vishay
Vishay Semiconductors

DESCRIPTION
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of MOSFETs offer the designer a new standard in power transistors for switching applications.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30V VGS Rating
• Reduced Ciss, Coss, Crss
• Isolated Central Mounting Hole
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Lead (Pb)-free Available

View
IRFP350LCPBF [Power MOSFET ]

other parts : IRFP350LC  SIHFP350LC  SIHFP350LC-E3 

Vishay
Vishay Semiconductors

DESCRIPTION
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of MOSFETs offer the designer a new standard in power transistors for switching applications.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30V VGS Rating
• Reduced Ciss, Coss, Crss
• Isolated Central Mounting Hole
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC

View
IRFP350LC [HEXFET Power MOSFET ] IR
International Rectifier

Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications.

● Ultra Low Gate Charge
● Reduced Gate Drive Requirement
● Enhanced 30V Vgs Rating
● Reduced Ciss, Coss, Crss
● Isolated Central Mounting Hole
● Dynamic dv/dt Rated
● Repetitive Avalanche Rated

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