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IRFP450

  

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Vishay
Vishay Semiconductors
IRFP450 Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the


other parts : IRFP450PBF SIHFP450-E3 SIHFP450 
Iscsemi
Inchange Semiconductor
IRFP450 N-Channel MOSFET Transistor

DESCRIPTION
• Designed for use in switch mode power supplies and general purpose applications.

FEATURES
• Drain Current –ID= 14A@ TC=25℃
• Drain Source Voltage-
   : VDSS= 500V(Min)
• Static Drain-Source On-Resistance
   : RDS(on) = 0.4Ω(Max)
• Fast Switching

ST-Microelectronics
STMicroelectronics
IRFP450 N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH™ MOSFET

DESCRIPTION
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.

■ TYPICAL RDS(on) = 0.33 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY

Intersil
Intersil
IRFP450 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated

IR
International Rectifier
IRFP450 HEXFET® Power MOSFET


NJSEMI
New Jersey Semiconductor
IRFP450 N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH™ MOSFET

DESCRIPTION
This power MOSFET is designed using the companys consolidated strip layout-based MESH OVERLAY"1 process. This technology matches and improves the performances compared with standard parts from various sources.

. TYPICAL RDS(on)= 0.33 Ω
. EXTREMELY HIGH dv/dt CAPABILITY
. 100% AVALANCHE TESTED
. VERY LOWINTRINSIC CAPACITANCES
. GATE CHARGE MINIMIZED

APPLICATIONS
. HIGH CURRENT SWITCHING
. UNINTERRUPTIBLE POWER SUPPLY (UPS)
. DC/DC COVERTERS FOR

Samsung
Samsung
IRFP450 N-CHANNEL POWER MOSFETS



other parts : IRFP451 IRFP452 IRFP453 
IXYS
IXYS CORPORATION
IRFP450 Standard Power MOSFET

N-Channel Enhancement Mode

Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Low package inductance (< 5 nH)
   - easy to drive and to protect
• Fast switching times

Applications
• Switch-mode and resonant-mode power supplies
• Motor controls
• Uninterruptible Power Supplies (UPS)
• DC choppers

Advantages
• Easy to mount with 1 screw (isolated

IR
International Rectifier
IRFP450S HEXFET® Power MOSFET VDSS=500V, RDS(on)typ.=0.135Ω, ID=32A

SMPS MOSFET

Applications
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits

Benefits
Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche Voltage and Current
Low RDS(on)


other parts : IRFP32N50KS 
Iscsemi
Inchange Semiconductor
IRFP450A N-Channel MOSFET Transistor

FEATURES
·Drain Current –ID= 14A@ TC=25℃
·Drain Source Voltage : VDSS= 500V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max)
·Fast Switching

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