Integrated circuits, Transistor, Semiconductors Free Datasheet Search and Download Site

IRFP450

  

Datasheet

Match, Like IRFP450 IRFP450A IRFP450B IRFP450N IRFP450S
Start with IRFP450* IRFP450A* IRFP450B* IRFP450L* IRFP450N* IRFP450P* IRFP450S*
End N/A
Included N/A

View Details

IRFP450 [Power MOSFET ]

other parts : IRFP450PBF  SIHFP450-E3  SIHFP450 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

View
IRFP450 [N-Channel MOSFET Transistor ] Iscsemi
Inchange Semiconductor

DESCRIPTION
• Designed for use in switch mode power supplies and general purpose applications.

FEATURES
• Drain Current –ID= 14A@ TC=25℃
• Drain Source Voltage-
   : VDSS= 500V(Min)
• Static Drain-Source On-Resistance
   : RDS(on) = 0.4Ω(Max)
• Fast Switching

View
IRFP450 [N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH™ MOSFET ] ST-Microelectronics
STMicroelectronics

DESCRIPTION
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.

■ TYPICAL RDS(on) = 0.33 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

View
IRFP450 [14A, 500V, 0.400 Ohm, N-Channel Power MOSFET ] Intersil
Intersil

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 14A, 500V
• rDS(ON) = 0.400Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

View
IRFP450 [HEXFET® Power MOSFET ] IR
International Rectifier


View
IRFP450 [N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH™ MOSFET ] NJSEMI
New Jersey Semiconductor

DESCRIPTION
This power MOSFET is designed using the companys consolidated strip layout-based MESH OVERLAY"1 process. This technology matches and improves the performances compared with standard parts from various sources.

. TYPICAL RDS(on)= 0.33 Ω
. EXTREMELY HIGH dv/dt CAPABILITY
. 100% AVALANCHE TESTED
. VERY LOWINTRINSIC CAPACITANCES
. GATE CHARGE MINIMIZED

APPLICATIONS
. HIGH CURRENT SWITCHING
. UNINTERRUPTIBLE POWER SUPPLY (UPS)
. DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

View
IRFP450 [N-CHANNEL POWER MOSFETS ]

other parts : IRFP451  IRFP452  IRFP453 

Samsung
Samsung


View
IRFP450 [Standard Power MOSFET ] IXYS
IXYS CORPORATION

N-Channel Enhancement Mode

Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Low package inductance (< 5 nH)
   - easy to drive and to protect
• Fast switching times

Applications
• Switch-mode and resonant-mode power supplies
• Motor controls
• Uninterruptible Power Supplies (UPS)
• DC choppers

Advantages
• Easy to mount with 1 screw (isolated mounting screw hole)
• Space savings
• High power density

View
IRFP450A [N-Channel MOSFET Transistor ] Iscsemi
Inchange Semiconductor

FEATURES
·Drain Current –ID= 14A@ TC=25℃
·Drain Source Voltage : VDSS= 500V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max)
·Fast Switching

View
IRFP450N [HEXFET® Power MOSFET ] IR
International Rectifier

Benefits
● Low Gate Charge Qg results in Simple Drive Requirement
● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
● Fully Characterized Capacitance and Avalanche Voltage and Current
● Effective Coss Specified (See AN 1001)

Applications
● Switch Mode Power Supply (SMPS)
● Uninterruptible Power Supply
● High Speed Power Switching

View
1 2 3

HOME



Language : 한국어   日本語   русский   简体中文   español
@ 2015 - 2018  [ Home ][ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]