DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available
DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features • 14A, 500V • rDS(ON) = 0.400Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
DESCRIPTION This power MOSFET is designed using the companys consolidated strip layout-based MESH OVERLAY"1 process. This technology matches and improves the performances compared with standard parts from various sources.
Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance (< 5 nH) - easy to drive and to protect • Fast switching times
Applications • Switch-mode and resonant-mode power supplies • Motor controls • Uninterruptible Power Supplies (UPS) • DC choppers
Advantages • Easy to mount with 1 screw (isolated mounting screw hole) • Space savings • High power density
Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss Specified (See AN 1001)
Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● High Speed Power Switching