DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the
DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated
DESCRIPTION This power MOSFET is designed using the companys consolidated strip layout-based MESH OVERLAY"1 process. This technology matches and improves the performances compared with standard parts from various sources.
Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance (< 5 nH) - easy to drive and to protect • Fast switching times
Applications • Switch-mode and resonant-mode power supplies • Motor controls • Uninterruptible Power Supplies (UPS) • DC choppers