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IRFP4710

  

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IRFP4710 [HEXFET® Power MOSFET ]

other parts : FP4710 

IR
International Rectifier

Benefits
● Low Gate-to-Drain Charge to Reduce
   Switching Losses
● Fully Characterized Capacitance Including
   Effective COSS to Simplify Design, (See
   App. Note AN1001)
● Fully Characterized Avalanche Voltage
   and Current

Applications
● High frequency DC-DC converters
● Motor Control
● Uninterruptible Power Supplies

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IRFP4710 [N-Channel MOSFET Transistor ]

other parts : IIRFP4710 

Iscsemi
Inchange Semiconductor

• DESCRITION
• High Frequency DC-DC Converters
• Uninterruptible Power Supply

• FEATURES
• Static drain-source on-resistance:
   RDS(on)≤14mΩ
• Enhancement mode:
   Vth =3.5 to 5.5 V (VDS=VGS, ID=250μ A)
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation

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IRFP4710PBF [HEXFET® Power MOSFET ]

other parts : FP4710PBF 

IR
International Rectifier

Benefits
● Low Gate-to-Drain Charge to Reduce
   Switching Losses
● Fully Characterized Capacitance Including
   Effective COSS to Simplify Design, (See
   App. Note AN1001)
● Fully Characterized Avalanche Voltage
   and Current

Applications
● High frequency DC-DC converters
● Motor Control
● Uninterruptible Power Supplies
● Lead-Free

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