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IRLR9343 [DIGITAL AUDIO MOSFET ]
other parts : IRLU9343
IRLU9343-701
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International Rectifier |
VDS -55 V
RDS(ON) typ. @ VGS = -10V 93 mΩ
RDS(ON) typ. @ VGS = -4.5V 150 mΩ
Qg typ. 31 nC
TJ max 175 °C
Description
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Features
● Advanced Process Technology
● Key Parameters Optimized for Class-D Audio Amplifier Applications
● Low RDSON for Improved Efficiency
● Low Qg and Qsw for Better THD and Improved Efficiency
● Low Qrr for Better THD and Lower EMI
● 175°C Operating Junction Temperature for Ruggedness
● Repetitive Avalanche Capability for Robustness and Reliability
● Multiple Package Options |
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IRLR9343PBF [DIGITAL AUDIO MOSFET ]
other parts : IRLU9343PBF
IRLU9343-701PBF
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International Rectifier |
Description
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Features
Advanced Process Technology
Key Parameters Optimized for Class-D Audio Amplifier Applications
Low RDSON for Improved Efficiency
Low Qg and Qsw for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
175°C Operating Junction Temperature for Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
Multiple Package Options
Lead-Free
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