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IXFR26N60Q

  

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IXFR26N60Q [HiPerFET™ Power MOSFETs ISOPLUS247™ Q-CLASS (Electrically Isolated Back Surface) ] IXYS
IXYS CORPORATION

HiPerFET™ Power MOSFETs ISOPLUS247™ Q-CLASS
(Electrically Isolated Back Surface)

N-Channel Enhancement Mode
Avalance Rated, High dV/dt
Low Gate Charge and Capacitances

Features
• Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
• IXYS advanced low Qg process
• Low gate charge and capacitances
   - easier to drive
   - faster switching
• Low drain to tab capacitance(<30pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Rated for Unclamped Inductive Load
   Switching (UIS)
• Fast intrinsic Rectifier

Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
   power supplies
• DC choppers
• AC & DC motor control

Advantages
• Easy assembly
• Space savings
• High power density

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