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K3561

  

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K3561_2003 [TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ]

other parts : 2SK3561_2003 

Toshiba
Toshiba

Switching Regulator Applications

● Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.)
● High forward transfer admittance: |Yfs| = 6.5S (typ.)
● Low leakage current: IDSS = 100 μ A (VDS = 500 V)
● Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

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K3561_2005 [TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ]

other parts : 2SK3561_2005 

Toshiba
Toshiba

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.5S (typ.)
• Low leakage current: IDSS = 100 μ A (VDS = 500 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

View
K3561_2006 [TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ]

other parts : 2SK3561_2006 

Toshiba
Toshiba

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.5S (typ.)
• Low leakage current: IDSS = 100 μ A (VDS = 500 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

View
K3561 [TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ]

other parts : 2SK3561 

Toshiba
Toshiba

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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