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K4A60DA

  

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K4A60DA [TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅦ) ]

other parts : TK4A60DA 

Toshiba
Toshiba

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
• Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

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