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LM3046

  

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 LM3046 LM3046M LM3046N
начиная LM3046M* LM3046N*
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LM3046 [Transistor Arrays ]

other parts : LM3045  LM3086  LM3045J  LM3046M  LM3046N  LM3086N 

National-Semiconductor
National ->Texas Instruments

General Description
The LM3045, LM3046 and LM3086 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair. The transistors are well suited to a wide variety of applications in low power system in the DC through VHF range. They may be used as discrete transistors in conventional circuits however, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. The LM3045 is supplied in a 14-lead cavity dual in-line package rated for operation over the full military temperature range. The LM3046 and LM3086 are electrically identical to the LM3045 but are supplied in a 14-lead molded dual-in-line package for applications requiring only a limited temperature range.

Features
■ Two matched pairs of transistors
   VBE matched ±5 mV
   Input offset current 2 μA max at IC = 1 mA
■ Five general purpose monolithic transistors
■ Operation from DC to 120 MHz
■ Wide operating current range
■ Low noise figure 3.2 dB typ at 1 kHz
■ Full military temperature range (LM3045) -55°C to +125°C

Applications
■ General use in all types of signal processing systems operating anywhere in the frequency range from DC to VHF
■ Custom designed differential amplifiers
■ Temperature compensated amplifiers

 

View
LM3046M [Transistor Arrays ]

other parts : LM3045  LM3046  LM3086  LM3045J  LM3046N  LM3086N 

National-Semiconductor
National ->Texas Instruments

General Description
The LM3045, LM3046 and LM3086 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair. The transistors are well suited to a wide variety of applications in low power system in the DC through VHF range. They may be used as discrete transistors in conventional circuits however, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. The LM3045 is supplied in a 14-lead cavity dual in-line package rated for operation over the full military temperature range. The LM3046 and LM3086 are electrically identical to the LM3045 but are supplied in a 14-lead molded dual-in-line package for applications requiring only a limited temperature range.

Features
■ Two matched pairs of transistors
   VBE matched ±5 mV
   Input offset current 2 μA max at IC = 1 mA
■ Five general purpose monolithic transistors
■ Operation from DC to 120 MHz
■ Wide operating current range
■ Low noise figure 3.2 dB typ at 1 kHz
■ Full military temperature range (LM3045) -55°C to +125°C

Applications
■ General use in all types of signal processing systems operating anywhere in the frequency range from DC to VHF
■ Custom designed differential amplifiers
■ Temperature compensated amplifiers

 

View
LM3046N [Transistor Arrays ]

other parts : LM3045  LM3046  LM3086  LM3045J  LM3046M  LM3086N 

National-Semiconductor
National ->Texas Instruments

General Description
The LM3045, LM3046 and LM3086 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair. The transistors are well suited to a wide variety of applications in low power system in the DC through VHF range. They may be used as discrete transistors in conventional circuits however, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. The LM3045 is supplied in a 14-lead cavity dual in-line package rated for operation over the full military temperature range. The LM3046 and LM3086 are electrically identical to the LM3045 but are supplied in a 14-lead molded dual-in-line package for applications requiring only a limited temperature range.

Features
■ Two matched pairs of transistors
   VBE matched ±5 mV
   Input offset current 2 μA max at IC = 1 mA
■ Five general purpose monolithic transistors
■ Operation from DC to 120 MHz
■ Wide operating current range
■ Low noise figure 3.2 dB typ at 1 kHz
■ Full military temperature range (LM3045) -55°C to +125°C

Applications
■ General use in all types of signal processing systems operating anywhere in the frequency range from DC to VHF
■ Custom designed differential amplifiers
■ Temperature compensated amplifiers

 

View
LM3046MX [Transistor Array ]

other parts : LM3046MDC  LM3046MWC 

National-Semiconductor
National ->Texas Instruments

General Description
The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair. The transistors are well suited to a wide variety of applications in low power system in the DC through VHF range. They may be used as discrete tran sistors in conventional circuits however, in addition, they pro
vide the very significant inherent integrated circuit advantages of close electrical and thermal matching. The LM3046 is supplied in a 14-lead molded dual-in-line package.

Features
Two matched pairs of transistors VBE matched ±5mV input offset current 2 µA max at IC=1mA
Five general purpose monolithic transistors
Operation from DC to 120 MHz
Wide operating current range
Low noise figure: 3.2 dB typ at 1 kHz

Applications
General use in all types of signal processing systems operating anywhere in the frequency range from DC to VHF
Custom designed differential amplifiers
Temperature compensated amplifiers

View
LM3046MDC [Transistor Array ]

other parts : LM3046MX  LM3046MWC 

National-Semiconductor
National ->Texas Instruments

General Description
The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair. The transistors are well suited to a wide variety of applications in low power system in the DC through VHF range. They may be used as discrete tran sistors in conventional circuits however, in addition, they pro
vide the very significant inherent integrated circuit advantages of close electrical and thermal matching. The LM3046 is supplied in a 14-lead molded dual-in-line package.

Features
Two matched pairs of transistors VBE matched ±5mV input offset current 2 µA max at IC=1mA
Five general purpose monolithic transistors
Operation from DC to 120 MHz
Wide operating current range
Low noise figure: 3.2 dB typ at 1 kHz

Applications
General use in all types of signal processing systems operating anywhere in the frequency range from DC to VHF
Custom designed differential amplifiers
Temperature compensated amplifiers

View
LM3046MWC [Transistor Array ]

other parts : LM3046MX  LM3046MDC 

National-Semiconductor
National ->Texas Instruments

General Description
The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair. The transistors are well suited to a wide variety of applications in low power system in the DC through VHF range. They may be used as discrete tran sistors in conventional circuits however, in addition, they pro
vide the very significant inherent integrated circuit advantages of close electrical and thermal matching. The LM3046 is supplied in a 14-lead molded dual-in-line package.

Features
Two matched pairs of transistors VBE matched ±5mV input offset current 2 µA max at IC=1mA
Five general purpose monolithic transistors
Operation from DC to 120 MHz
Wide operating current range
Low noise figure: 3.2 dB typ at 1 kHz

Applications
General use in all types of signal processing systems operating anywhere in the frequency range from DC to VHF
Custom designed differential amplifiers
Temperature compensated amplifiers

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