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MBR835

  

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MBR835 [8.0A SCHOTTKY BARRIER RECTIFIER ]

other parts : MBR830  MBR840  MBR845  MBR850  MBR860 

Diodes
Diodes Incorporated.

Features
● Schottky Barrier Chip
● Guard Ring Die Construction for
   Transient Protection
● Low Power Loss, High Efficiency
● High Surge Capability
● High Current Capability and Low Forward
   Voltage Drop
● For Use in Low Voltage, High Frequency
   Inverters, Free Wheeling, and Polarity
   Protection Application
● Plastic Material: UL Flammability
   Classification Rating 94V-0

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MBR835 [SCHOTTKY BARRIER RECTIFIERS 8.0 AMPERES ]

other parts : MBR835RL  MBR840  MBR840RL  MBR845  MBR845RL 

ON-Semiconductor
ON Semiconductor

Axial Lead Rectifiers

. . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.

• High Current Capability
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
• Guard−Ring for Stress Protection
• Low Forward Voltage
• High Surge Capacity

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MBR835 [Wide Temperature Range and High Tjm Schottky Barrier Rectifiers ]

other parts : MBR830  MBR840  MBR845 

ETC1
Unspecified

[Sirectifier]

FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
   whelling, and polarity protection applications

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MBR835 [SCHOTTKY BARRIER RECTIFIER ]

other parts : MBR830  MBR840  MBR845  MBR850  MBR860  MBR880  MBR8100 

BILIN
Galaxy Semi-Conductor

VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A

FEATURES
◇ High surge capacity.
◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.
◇ Metal silicon junction, majority carrier conduction.
◇ High current capacity, low forward voltage drop.
◇ Guard ring for over voltage protection.

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MBR835 [Schottky Barrier Rectifiers ]

other parts : MBR830  MBR840  MBR845  MBR850  MBR860  MBR880  MBR8100 

LUGUANG
Shenzhen Luguang Electronic Technology Co., Ltd

VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A

Features
◇ High surge capacity.
◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.
◇ Metal silicon junction, majority carrier conduction.
◇ High current capacity, low forward voltage drop.
◇ The plastic material carries U/L recognition 94V-0

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MBR835_Old_V [High Tjm Low IRRM Schottky Barrier Diodes ]

other parts : MBR830_Old_V  MBR840_Old_V  MBR845_Old_V 

Sirectifier
Sirectifier Electronics

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
   whelling, and polarity protection applications

View
MBR835 [High Tjm Low IRRM Schottky Barrier Diodes ]

other parts : MBR830  MBR840  MBR845 

Sirectifier
Sirectifier Electronics

FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
   whelling, and polarity protection applications
* RoHS compliant

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MBR835 [8.0A SCHOTTKY BARRIER RECTIFIER ]

other parts : MBR830  MBR840  MBR845  MBR850  MBR860 

KERSEMI
Kersemi Electronic Co., Ltd.

Features
● Schottky Barrier Chip
● Guard Ring Die Construction for
   Transient Protection
● Low Power Loss, High Efficiency
● High Surge Capability
● High Current Capability and Low Forward
   Voltage Drop
● For Use in Low Voltage, High Frequency
   Inverters, Free Wheeling, and Polarity
   Protection Application
● Plastic Material: UL Flammability
   Classification Rating 94V-0

View
MBR835RL [SCHOTTKY BARRIER RECTIFIERS 8.0 AMPERES ]

other parts : MBR835  MBR840  MBR840RL  MBR845  MBR845RL 

ON-Semiconductor
ON Semiconductor

Axial Lead Rectifiers

. . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.

• High Current Capability
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
• Guard−Ring for Stress Protection
• Low Forward Voltage
• High Surge Capacity

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