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MJ11032

  

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MJ11032 [Silicon NPN Darlington Power Transistor ] Iscsemi
Inchange Semiconductor

DESCRIPTION
• Collector-Emitter Breakdown Voltage
   : V(BR)CEO= 120V(Min.)
• High DC Current Gain-
   : hFE= 1000(Min.)@IC= 25A
   : hFE= 400(Min.)@IC= 50A
• Complement to Type MJ11033

APPLICATIONS
• Designed for use as output devices in complementary
   general purpose amplifier applications.

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MJ11032 [COMPLEMENTARY DARLINGTON POWER TRANSISTOR ]

other parts : MJ11028  MJ11030  MJ11029  MJ11031  MJ11033 

Semelab
Semelab - > TT Electronics plc

FEATURES
• HIGH DC CURRENT GAIN
   HFE = 1000 Min @ IC = 25A
   HFE = 400 Min 0@ IC = 50A
• CURVES TO 100A (Pulsed)
• DIODE PROTECTION TO RATED IC
• MONOLITHIC CONSTRUCTION WITH
   BUILT-IN BASE – EMITTER SHUNT RESISTOR
• JUNCTION TEMPERATURE TO +200°C

APPLICATIONS
   For use as output devices in complementary
      general purpose amplifier applications.

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MJ11032 [COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ]

other parts : MJ11028  MJ11029  MJ11030  MJ11031  MJ11033 

Mospec
Mospec Semiconductor

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

. . . designed for use as output devices in complementary general purpose amplifier applications.
• High Gain Darlington Performance
• High DC Current Gain: hFE = 1000 (Min) @ IC = 25 A
                                        hFE = 400 (Min) @ IC = 50 A
• Monolithic Construction with Built–In Base–Emitter Shunt Resistor

View
MJ11032 [High-Current Complementary Silicon Transistor ]

other parts : MJ11028  MJ11029  MJ11030  MJ11031  MJ11033 

Motorola
Motorola => Freescale

High-Current Complementary Silicon Transistor

. . . for use as output devices in complementary general purpose amplifier applications.

• High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc
                                           hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with Built–In Base–Emitter Shunt Resistor
• Junction Temperature to +200°C

View
MJ11032_2005 [High-Current Complementary Silicon Power Transistors ]

other parts : MJ11028_2005  MJ11029_2005  MJ11030_2005  MJ11033_2005  MJ11028G_2005  MJ11029G_2005  MJ11030G_2005  MJ11032G_2005  MJ11033G_2005 

ON-Semiconductor
ON Semiconductor

High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.

Features
• High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc
                                          hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor
• Junction Temperature to +200°C
• Pb−Free Packages are Available*

View
MJ11032 [High-Current Complementary Silicon Power Transistors ]

other parts : MJ11028  MJ11029  MJ11030  MJ11033  MJ11028G  MJ11029G  MJ11030G  MJ11032G  MJ11033G 

ON-Semiconductor
ON Semiconductor

High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.

Features
• High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc
                                          hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor
• Junction Temperature to +200°C
• Pb−Free Packages are Available*

View
MJ11032 [NPN SILICON DARLINGTON TRANSISTOR ] WingShing
Wing Shing International Group

SWITCHING REGULATORS PWM INVERTERS

SOLENOID AND RELAY DRIVERS

View
MJ11032 [High-Current Complementary Silicon Power Transistors ]

other parts : MJ11028  MJ11030  MJ11029  MJ11033 

NJSEMI
New Jersey Semiconductor

High-Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.

Features
• High DC Current Gain - hFE = 1000 (Min) @ Ic = 25Adc
                                         hFE = 400 (Min)@ Ic = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated Ic
• Monolithic Construction with Built-in Base-Emitter Shunt Resistor
• Junction Temperature to + 200 °C

View
MJ11032G_2005 [High-Current Complementary Silicon Power Transistors ]

other parts : MJ11028_2005  MJ11029_2005  MJ11030_2005  MJ11032_2005  MJ11033_2005  MJ11028G_2005  MJ11029G_2005  MJ11030G_2005  MJ11033G_2005 

ON-Semiconductor
ON Semiconductor

High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.

Features
• High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc
                                          hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor
• Junction Temperature to +200°C
• Pb−Free Packages are Available*

View
MJ11032G [High-Current Complementary Silicon Power Transistors ]

other parts : MJ11028  MJ11029  MJ11030  MJ11032  MJ11033  MJ11028G  MJ11029G  MJ11030G  MJ11033G 

ON-Semiconductor
ON Semiconductor

High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.

Features
• High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc
                                          hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor
• Junction Temperature to +200°C
• Pb−Free Packages are Available*

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