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MJE18004D2

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MJE18004D2 [High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network ] Motorola
Motorola => Freescale

The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.
   
Main features:
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the
    H2BIP Structure which Minimizes the Spread
• Integrated Collector–Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic VCE(sat)
• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
    It’s characteristics make it also suitable for PFC application.
   

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MJE18004D2 [High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network ] ON-Semiconductor
ON Semiconductor

The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.
   
Main features:
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the
    H2BIP Structure which Minimizes the Spread
• Integrated Collector–Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic VCE(sat)
• “6 Sigma” Process Providing Tight and Reproductible Parameter
    Spreads
    It’s characteristics make it also suitable for PFC application.
   

View
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