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MJE2801T

  

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MJE2801T [Silicon NPN Power Transistor ] Iscsemi
Inchange Semiconductor

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO = 60V(Min)
• High DC Current Gain-
   : hFE= 25-100@IC= 3A
• Complement to Type MJE2901T

APPLICATIONS
• Designed for use as an output device in complementary
   audio amplifiers up to 35 watts music power per channel.

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MJE2801T [Power Transistors ]

other parts : BU407  BU406  BU408  D44C11  BU408D  BU407D  D44H11  BU406D  2N6499  2N6498 

Central-Semiconductor
Central Semiconductor

Power Transistors

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MJE2801T [COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ]

other parts : MJE2901T 

NJSEMI
New Jersey Semiconductor

... designed for use as output device in complementary audio amplifiers up to 30-Watts music power per channel

FEATURES:
• Collector-Emitter Sustaining Voltage-
   VCEO(sus) = 60 V (Min)
* DC Current Gain-
   hFE = 25-100 @ Ic = 3.0 A

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MJE2801T_ [Power Transistors ]

other parts : BU407  BU406  BU408  D44C11  BU408D  BU407D  D44H11  BU406D  2N6499  2N6498 

Central-Semiconductor
Central Semiconductor

Power Transistors

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