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MMBTH10

  

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MMBTH10 [NPN SURFACE MOUNT VHF/UHF TRANSISTOR ] Diodes
Diodes Incorporated.

Features
•  Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators
•  High Current Gain Bandwidth Product
•  Ideal for Mixer and RF Amplifier Applications with collector currents in the 100μA - 30 mA Range
•  Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device
•  Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data
•  Case: SOT-23
•  Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
•  Moisture Sensitivity: Level 1 per J-STD-020D
•  Terminals: Solderable per MIL-STD-202, Method 208
•  Terminal Connections: See Diagram
•  Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe).
•  Marking Information: K3H, K3Y; See Page 3
•  Weight: 0.008 grams (approximate)

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MMBTH10 [NPN SILICON TRANSISTOR ]

other parts : MMBTH10-X-AL3-R  MMBTH10-X-AE3-R  MMBTH10-C-AN3-R  MMBTH10-C-AL3-R  MMBTH10-C-AE3-R  MMBTH10-B-AN3-R  MMBTH10-B-AL3-R  MMBTH10-B-AE3-R  MMBTH10-A-AN3-R  MMBTH10-A-AL3-R 

UTC
Unisonic Technologies

RF TRANSISTOR

DESCRIPTION
The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver.

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MMBTH10 [NPN Silicon VHF/UHF Transistor ] GSME
Guilin Strong Micro-Electronics Co., Ltd.

NPN Silicon VHF/UHF Transistor

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MMBTH10 [NPN Silicon VHF/UHF Transistor ] HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.

TRANSISTOR(NPN)

FEATURES
● VHF/UHF Transistor

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MMBTH10 [NPN RF Transistor ]

other parts : MPSH10 

Fairchild
Fairchild Semiconductor

This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.

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MMBTH10-T [VHF/UHF NPN SILICON TRANSISTOR ]

other parts : MMBTH10-R  MMBTH10-T-3K  MMBTH10-R-12K 

PanJit
PANJIT INTERNATIONAL

VOLTAGE 25 Volts 225 mW

FEATURES
• NPN Silicon
• In compliance with EU RoHS 2002/95/EC directives POWER

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MMBTH10RG [NPN RF Transistor ] Fairchild
Fairchild Semiconductor

• This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators.
• Sourced from process 42.

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MMBTH10-7 [NPN SURFACE MOUNT VHF/UHF TRANSISTOR ]

other parts : MMBTH10-7-F 

Diodes
Diodes Incorporated.

•  Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators
•  High Current Gain Bandwidth Product
•  Ideal for Mixer and RF Amplifier Applications with collector currents in the 100μA - 30 mA Range
•  Lead, Halogen and Antimony Free, RoHS Compliant

 

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MMBTH10-R [VHF/UHF NPN SILICON TRANSISTOR ]

other parts : MMBTH10-T  MMBTH10-T-3K  MMBTH10-R-12K 

PanJit
PANJIT INTERNATIONAL

VOLTAGE 25 Volts 225 mW

FEATURES
• NPN Silicon
• In compliance with EU RoHS 2002/95/EC directives POWER

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MMBTH10LT1 [VHF/UHF Transistor NPN Silicon ]

other parts : MMBTH10-4LT1 

ON-Semiconductor
ON Semiconductor

VHF/UHF Transistor NPN Silicon

•Device Marking: 3EM

Features
•Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

 

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