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MPSH10

  

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DC-Components
DC-ComponentsDC-Components
MPSH10 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description
Designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.

UTC
UTCUTC
MPSH10 NPN EPITAXIAL SILICON TRANSISTOR

RF TRANSISTOR

■ DESCRIPTION
The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver.


other parts : MPSH10-X-T92-B MPSH10-X-T92-K MPSH10G-X-T92-B MPSH10G-X-T92-K MPSH10L-X-T92-B MPSH10L-X-T92-K MPSH10-A-T92-B MPSH10-A-T92-K MPSH10-B-T92-B MPSH10-B-T92-K 
Central-Semiconductor
Central-SemiconductorCentral-Semiconductor
MPSH10 SILICON NPN RF TRANSISTORS

DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPSH10 and MPSH11 are silicon NPN RF transistors manufactured by the epitaxial planar process and designed for low noise UHF/VHF amplifier and high output oscillator applications.


other parts : MPSH11 
CDIL
CDILCDIL
MPSH10 NPN SILICON PLANAR EPITAXIAL TRANSISTOR

VHF/UHF Transistor

Philips
PhilipsPhilips
MPSH10 NPN 1 GHz general purpose switching transistor

DESCRIPTION
Silicon NPN general purpose transistor in a SOT54 (TO-92) package. PNP complement is the MPSH81.

FEATURES
• Low cost
• High power gain.

MCC
MCCMCC
MPSH10 NPN RF Transistor

Features
• Capable of 0.35Watts of Power Dissipation.
• Collector Current: 0.05A
• Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Marking:MPSH10


other parts : MPSH10-AP MPSH10-BP 
DAYA
DAYADAYA
MPSH10 VHF/UHF Transistors


other parts : MPSH11 
WINNERJOIN
WINNERJOINWINNERJOIN
MPSH10 TRANSISTOR (NPN)

FEATURES
   Power dissipation
      PCM: 0.35 W (Tamb=25℃)
   Collector current
      ICM: 0.05 A
   Collector-base voltage
      V(BR)CBO: 30 V
   Operating and storage junction temperature range
      TJ, Tstg: -55℃ to +150℃


other parts : MPSH11 
ON-Semiconductor
ON-SemiconductorON-Semiconductor
MPSH10 VHF/UHF Transistors NPN Silicon

Features
Pb−Free Packages are Available*


other parts : MPSH10G MPSH10RLRA MPSH10RLRAG MPSH10RLRP MPSH10RLRPG 
Fairchild
FairchildFairchild
MPSH10 NPN RF Transistor

This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


other parts : MMBTH10 

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