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NCP3488

  

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NCP3488 [MOSFET Driver with Dual Outputs for Synchronous Buck Converters ]

other parts : NCP3488DR2G 

ON-Semiconductor
ON Semiconductor

The NCP3488 is a single Phase 12 V MOSFET gate driver optimized to drive the gates of both high−side and low−side power MOSFETs in a synchronous buck converter. The high−side and low−side driver is capable of driving a 3000 pF load with a 25 ns propagation delay and a 20 ns transition time.
With a wide operating voltage range, high or low side MOSFET gate drive voltage can be optimized for the best efficiency. Internal adaptive nonoverlap circuitry further reduces switching losses by preventing simultaneous conduction of both MOSFETs.
The floating top driver design can accommodate VBST voltages as high as 30 V, with transient voltages as high as 35 V. Both gate outputs can be driven low by applying a low logic level to the Output Disable (OD) pin. An Undervoltage Lockout function ensures that both driver outputs are low when the supply voltage is low, and a Thermal Shutdown function provides the IC with overtemperature protection.

Features
• Thermal Shutdown for System Protection
• Internal Pulldown Resistor Suppresses Transient Turn On of Either MOSFET
• Anti Cross−Conduction Protection Circuitry
• Floating Top Driver Accommodates Boost Voltages of up to 30 V
• One Input Signal Controls Both the Upper and Lower Gate Outputs
• Output Disable Control Turns Off Both MOSFETs
• Complies with VRM10.x and VRM11.x Specifications
• Undervoltage Lockout
• Thermal Shutdown
• Thermally Enhanced Package Available
• This is a Pb−Free Device

View
NCP3488DR2G [MOSFET Driver with Dual Outputs for Synchronous Buck Converters ]

other parts : NCP3488 

ON-Semiconductor
ON Semiconductor

The NCP3488 is a single Phase 12 V MOSFET gate driver optimized to drive the gates of both high−side and low−side power MOSFETs in a synchronous buck converter. The high−side and low−side driver is capable of driving a 3000 pF load with a 25 ns propagation delay and a 20 ns transition time.
With a wide operating voltage range, high or low side MOSFET gate drive voltage can be optimized for the best efficiency. Internal adaptive nonoverlap circuitry further reduces switching losses by preventing simultaneous conduction of both MOSFETs.
The floating top driver design can accommodate VBST voltages as high as 30 V, with transient voltages as high as 35 V. Both gate outputs can be driven low by applying a low logic level to the Output Disable (OD) pin. An Undervoltage Lockout function ensures that both driver outputs are low when the supply voltage is low, and a Thermal Shutdown function provides the IC with overtemperature protection.

Features
• Thermal Shutdown for System Protection
• Internal Pulldown Resistor Suppresses Transient Turn On of Either MOSFET
• Anti Cross−Conduction Protection Circuitry
• Floating Top Driver Accommodates Boost Voltages of up to 30 V
• One Input Signal Controls Both the Upper and Lower Gate Outputs
• Output Disable Control Turns Off Both MOSFETs
• Complies with VRM10.x and VRM11.x Specifications
• Undervoltage Lockout
• Thermal Shutdown
• Thermally Enhanced Package Available
• This is a Pb−Free Device

View
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