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NDS9933A

  

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NDS9933A [Dual P-Channel Enhancement Mode Field Effect Transistor ] National-Semiconductor
National ->Texas Instruments

General Description
SO-8 P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored
to minimize on-state resistance and provide superior switching performance.These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where
fast switching, low in-line power loss, and resistance to transients are needed.

Features
-2.7 A, -20 V. RDS(ON) = 0.14 W @ VGS = -4.5 V
                   RDS(ON) = 0.19 W @ VGS = -2.7 V
                  RDS(ON) = 0.2 W @ VGS = -2.5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
Dual MOSFET in surface mount package.

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NDS9933A [Dual P-Channel Enhancement Mode Field Effect Transistor ]

other parts : NDS9933 

Fairchild
Fairchild Semiconductor

General Description
This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini mize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage apllications such as DC motor control and DC/DC conversion where fast switching,low in-line power loss, and resistance to transients are
needed.

Features
• -2.8 A, -20 V. RDS(on) = 0.14 Ω @ VGS = -4.5 V
                    RDS(on) = 0.19 Ω @ VGS = -2.7 V
                    RDS(on) = 0.20 Ω @ VGS = -2.5 V.
• High density cell design for extremely low RDS(on).
• High power and current handling capability in a widely used surface mount package.
• Dual MOSFET in surface mount package.

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