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NGTB15N60S1EG

  

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ON-Semiconductor
ON Semiconductor
NGTB15N60S1EG_2012 IGBT - Short-Circuit Rated

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged co−packaged reverse recovery diode with a low forward voltage.

Features
• Low Saturation

ON-Semiconductor
ON Semiconductor
NGTB15N60S1EG IGBT - Short-Circuit Rated

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged co−packaged reverse recovery diode with a low forward voltage.

Features
• Low Saturation

ETC
Unspecified
NGTB15N60S1EG IGBT Transistors 15A 600V IGBT

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