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NT2955G

  

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NT2955G [Power MOSFET −60 V, −12 A, P−Channel DPAK ]

other parts : NTD2955  NVD2955  NTD2955G  NTD2955P  NTD2955T4G  NVD2955T4G  NTD2955PT4G  NTD2955−1G 

ON-Semiconductor
ON Semiconductor

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high−speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.

Features
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes
• NVD Prefix for Automotive and Other Applications Requiring
  Unique Site and Control Change Requirements; AEC−Q101
  Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant

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