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PZT2907A

  

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PZT2907A [PNP silicon epitaxial transistor ]

other parts : PZT2907AT1 

NXP
NXP Semiconductors.

FEATURES
• High current (max. 600 mA)
• Low voltage (max. 60 V).

APPLICATIONS
• Switching and linear amplification.

DESCRIPTION
PNP switching transistor in a SOT223 plastic package.
NPN complement: PZT2222A.

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PZT2907A [PNP Silicon Epitaxial Transistor ]

other parts : PZT2907AT1G  PZT2907AT3G  SPZT2907AT1G 

ON-Semiconductor
ON Semiconductor

This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

Features
• NPN Complement is PZT2222AT1
• The SOT-223 Package can be Soldered Using Wave or Reflow
• SOT-223 Package Ensures Level Mounting, Resulting in Improved
   Thermal Conduction, and Allows Visual Inspection of Soldered
   Joints. The Formed Leads Absorb Thermal Stress during Soldering
   Eliminating the Possibility of Damage to the Die
• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*

 

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PZT2907A [PNP switching transistor ] Philips
Philips Electronics

DESCRIPTION
PNP switching transistor in a SOT223 plastic package.
NPN complement: PZT2222A.

FEATURES
• High current (max. 600 mA)
• Low voltage (max. 60 V).

APPLICATIONS
• Switching and linear amplification.

 

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PZT2907A [PNP Silicon Silicon Planar Medium Power Transistor ]

other parts : 2907A 

Secos
Secos Corporation.

DESCRIPTION
• The PZT2907A is designed for general purpose amplifier and high-speed switching, medium power switching applications.

 

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PZT2907A [PNP General Purpose Amplifier ] Twtysemi
TY Semiconductor

■ Features
● Power Collector dissipation: PC=1W
● Continuous Collector Current: IC=-600mA

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PZT2907A [PNP GENERAL PURPOSE AMPLIFIER ]

other parts : PZT2907AG-AA3-R  PZT2907AL-AA3-R 

UTC
Unisonic Technologies

■ DESCRIPTION
This UTC PZT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA.

 

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PZT2907A [TRANSISTOR (PNP) ] WEJ
WEJ ELECTRONIC CO.

FEATURES
  Power dissipation
     PCM: 1 W (Tamb=25℃)
  Collector current
     ICM: -0.6 A
  Collector-base voltage
     V(BR)CBO: -60 V
  Operating and storage junction temperature range
     TJ, Tstg: -55℃ to +150℃

 

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PZT2907A [Suface Mount Si-Epitaxial Planar Switching Transistors ]

other parts : PZT2907 

Diotec
Diotec Semiconductor Germany

• Power dissipation                     1.3 W
• Plastic case                         SOT-223
• Weight approx.                        0.04 g
• Plastic material has UL classification 94V-0
• Standard packaging taped and reeled
 

 

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PZT2907A [PNP Silicon Switching Transistors ]

other parts : ZT2907  PZT2907  ZT2907A  Q62702-Z2025  Q62702-Z2028 

Siemens
Siemens AG

PNP Silicon Switching Transistors

● High DC current gain: 0.1 mA to 500 mA
● Low collector-emitter saturation voltage
● Complementary types: PZT 2222 (NPN)
                                        PZT 2222 A (NPN)

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PZT2907A [60 V PNP General Purpose Transistor ]

other parts : PN2907A  PN2907ABU  PN2907ATF  PN2907ATA  MMBT2907A  PN2907ATAR  PN2907ATFR  MMBT2907A_D87Z 

Fairchild
Fairchild Semiconductor

Description
The PN2907A, MMBT2907A, and PZT2907A are 60 V-PNP bipolar transistors designed for use as a gen eral-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for space-constrained systems. The NPN complementary types are the PN2222A, MMBT2222A, and PZT2222A; respectively.

Features
• High DC Current Gain (hFE) Range: 100 – 300
• High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum.)
• Maximum Turn-On Time (ton): 45 ns
• Maximum Turn-Off Time (toff): 100 ns
• Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A)

Applications
• General-Purpose Amplifier
• Switch

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