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RF2126

  

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RFMD
RF Micro Devices
RF2126 HIGH POWER LINEAR AMPLIFIER

Product Description
The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and POS terminals. The part will also function as the final stage in transmitters requiring linear amplification operating between 400MHz and 2700MHz. The device is packaged in an 8-lead plastic package


other parts : RF2126PCK 
RFMD
RF Micro Devices
RF2126 High power linear amplifier
other parts : RF2125 RF2125P RF2125PCBA RF2125PPCBA RF2126PCBA 
RFMD
RF Micro Devices
RF2126_07 HIGH POWER LINEAR AMPLIFIER

Product Description
The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and POS terminals. The part will also function as the final stage in digital PCS phone transmitters requiring linear amplification operating between 1800MHz and 2500MHz. The device is packaged in an


other parts : RF2126PCBA 
RFMD
RF Micro Devices
RF2126PCK HIGH POWER LINEAR AMPLIFIER

Product Description
The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and POS terminals. The part will also function as the final stage in transmitters requiring linear amplification operating between 400MHz and 2700MHz. The device is packaged in an 8-lead plastic package


other parts : RF2126 
RFMD
RF Micro Devices
RF2126PCK HIGH POWER LINEAR AMPLIFIER

Product Description
The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and POS terminals. The part will also function as the final stage in transmitters requiring linear amplification operating between 400MHz and 2700MHz. The device is packaged in an 8-lead plastic package

RFMD
RF Micro Devices
RF2126PCBA HIGH POWER LINEAR AMPLIFIER

Product Description
The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and POS terminals. The part will also function as the final stage in digital PCS phone transmitters requiring linear amplification operating between 1800MHz and 2500MHz. The device is packaged in an


other parts : RF2126_07 
RFMD
RF Micro Devices
RF2126PCBA High power linear amplifier
other parts : RF2125 RF2125P RF2125PCBA RF2125PPCBA RF2126 

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