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RQA0001DNS

  

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Manufacturer Part no Description View
Renesas
Renesas Electronics
RQA0001DNS Silicon N-Channel MOS FET

Features
• High Output Power, High Gain, High Efficiency
   Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)
• Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8mm)


other parts : RQA0001DNSTR-E RQA0001DNSTR 
Renesas
Renesas Electronics
RQA0001DNSTR Silicon N-Channel MOS FET

Features
• High Output Power, High Gain, High Efficiency
   Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)
• Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8mm)


other parts : RQA0001DNS RQA0001DNSTR-E 
Renesas
Renesas Electronics
RQA0001DNSTR-E Silicon N-Channel MOS FET

Features
• High Output Power, High Gain, High Efficiency
   Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)
• Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8mm)


other parts : RQA0001DNS RQA0001DNSTR 

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