Integrated circuits, Transistor, Semiconductors Free Datasheet Search and Download Site

RQA0009TXDQS

  

Datasheet

Match, Like RQA0009TXDQS
Start with RQA0009TXDQS*
End N/A
Included N/A

View Details

RQA0009TXDQS [Silicon N-Channel MOS FET ]

other parts : RQA0009TXTL-E 

Renesas
Renesas Electronics

Features
• High Output Power, High Gain, High Efficiency
   Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65%
   (VDS = 6 V, f = 520 MHz)
• Compact package capable of surface mounting
• Electrostatic Discharge Immunity Test
   (IEC Standard, 61000-4-2, Level4)

View
1

HOME



Language : 한국어   日本語   русский   简体中文   español
@ 2015 - 2018  [ Home ][ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]