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RQA0009TXDQS

  

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RQA0009TXDQS [Silicon N-Channel MOS FET ]

other parts : RQA0009TXTL-E 

Renesas
Renesas Electronics

Features
• High Output Power, High Gain, High Efficiency
   Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65%
   (VDS = 6 V, f = 520 MHz)
• Compact package capable of surface mounting
• Electrostatic Discharge Immunity Test
   (IEC Standard, 61000-4-2, Level4)

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