Integrated circuits, Transistor, Semiconductors Free Datasheet Search and Download Site

SGA-2486

  

Datasheet

Match, Like SGA-2486 SGA-2486Z
Start with SGA-2486Z*
End N/A
Included N/A
View Details    
SGA-2486 [DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier ]

other parts : SGA-2486Z 

ETC1
Unspecified

[SIRENZA microdevices]

Product Description
The SGA-5386 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation.

Product Features
• Now available in Lead Free, RoHS
   Compliant, & Green Packaging
• High Gain : 14.9 dB at 1950 MHz
• Cascadable 50 Ohm
• Operates From Single Supply
• Low Thermal Resistance Package

Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite

View
SGA-2486 [DC-2000 MHz, Cascadable SiGe HBT MMIC Amplifier ] Stanford-Microdevices
Stanford Microdevices

Product Description
Stanford Microdevices The SGA-2486 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. optional RF choke are required for operation

Product Features
• High Gain : 16.7 dB at 1950 MHz
• Cascadable 50 Ohm
• Patented SiGs Technology
• Operates From Single Supply
• Low Thermal Resistance Package

Applications
• Cellular, PCS, CDPD
• Wireless Data, SONET
• Satellite

View
SGA-2486Z [DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier ]

other parts : SGA-2486 

ETC1
Unspecified

[SIRENZA microdevices]

Product Description
The SGA-5386 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation.

Product Features
• Now available in Lead Free, RoHS
   Compliant, & Green Packaging
• High Gain : 14.9 dB at 1950 MHz
• Cascadable 50 Ohm
• Operates From Single Supply
• Low Thermal Resistance Package

Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite

View
SGA-2486 [DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier ]

other parts : SGA-2486Z 

Sirenza
Sirenza Microdevices => RFMD

Product Description
The SGA-5386 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation.

Product Features
• Now available in Lead Free, RoHS
   Compliant, & Green Packaging
• High Gain : 14.9 dB at 1950 MHz
• Cascadable 50 Ohm
• Operates From Single Supply
• Low Thermal Resistance Package

Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite

View
SGA-2486Z [DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier ]

other parts : SGA-2486 

Sirenza
Sirenza Microdevices => RFMD

Product Description
The SGA-5386 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation.

Product Features
• Now available in Lead Free, RoHS
   Compliant, & Green Packaging
• High Gain : 14.9 dB at 1950 MHz
• Cascadable 50 Ohm
• Operates From Single Supply
• Low Thermal Resistance Package

Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite

View
1
Share Link : 

HOME

Language : 한국어     日本語     русский     简体中文     español
@ 2015 - 2018  [ Home ][ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]