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STD3NB50

  

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STD3N25 [N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ]

other parts : STD3N25-1  STD3N25T4 

ST-Microelectronics
STMicroelectronics

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 1 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER
   PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING DPAK (TO-252)
   POWER PACKAGE IN TAPE & REEL
   (SUFFIX ”T4”)

APPLICATIONS
■ HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ INDUSTRIAL ACTUATORS
■ DC-DC & DC-AC CONVERTERS FOR
   TELECOM, INDUSTRIAL AND CONSUMER
   ENVIRONMENT
■ PARTICULARLY SUITABLE FOR
   ELECTRONIC FLUORESCENT LAMP
   BALLASTS

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STD3NA50 [N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ]

other parts : STD6N10  STD9N10  STN2N06  STD2NA60  STN2N10L  STD2NA50  STB5NA80  STP2NA50  STB18N20  STB15N25 

ST-Microelectronics
STMicroelectronics

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 3.25 Ω
■ ±30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1")
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")

APPLICATIONS
■ MEDIUM CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ CONSUMER AND INDUSTRIAL LIGHTING

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STD3N25-1 [N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ]

other parts : STD3N25  STD3N25T4 

ST-Microelectronics
STMicroelectronics

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 1 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER
   PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING DPAK (TO-252)
   POWER PACKAGE IN TAPE & REEL
   (SUFFIX ”T4”)

APPLICATIONS
■ HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ INDUSTRIAL ACTUATORS
■ DC-DC & DC-AC CONVERTERS FOR
   TELECOM, INDUSTRIAL AND CONSUMER
   ENVIRONMENT
■ PARTICULARLY SUITABLE FOR
   ELECTRONIC FLUORESCENT LAMP
   BALLASTS

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STD3N25T4 [N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ]

other parts : STD3N25  STD3N25-1 

ST-Microelectronics
STMicroelectronics

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 1 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER
   PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING DPAK (TO-252)
   POWER PACKAGE IN TAPE & REEL
   (SUFFIX ”T4”)

APPLICATIONS
■ HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ INDUSTRIAL ACTUATORS
■ DC-DC & DC-AC CONVERTERS FOR
   TELECOM, INDUSTRIAL AND CONSUMER
   ENVIRONMENT
■ PARTICULARLY SUITABLE FOR
   ELECTRONIC FLUORESCENT LAMP
   BALLASTS

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STD3N30-1 [N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ]

other parts : STP5N30  STP2N80  STK2N80  STD12N05  STP20N06  STP33N10  STK22N05  STP30N06  STD12N06  STP25N06 

ST-Microelectronics
STMicroelectronics

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 0.045Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175oC OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

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STD3N62K3 [N-channel 620 V, 2.2 Ω, 2.7 A SuperMESH3™ Power MOSFET ]

other parts : 3N62K3  6N62K3  STB3N62K3  STF3N62K3  STP3N62K3  STU3N62K3 

ST-Microelectronics
STMicroelectronics

The new SuperMESH3™ series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH™ layout with a new optimization of the vertical structure. In addition to reducing on-resistance significantly versus previous generation, special attention has been taken to ensure a very good dv/dt capability and highermargin in breakdown voltage for the most demanding application.

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STD3NK60Z [N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET ]

other parts : D3NK60Z  B3NK60Z  P3NK60Z  STB3NK60Z  P3NK60ZFP  STP3NK60Z  STP3NK60ZFP  STD3NK60Z-1  STD3NK60ZT4  STB3NK60ZT4 

ST-Microelectronics
STMicroelectronics

DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

■ TYPICAL RDS(on) = 3.3 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
■ LIGHTING

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STD3NK80Z_2003 [N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH™ Power MOSFET ]

other parts : D3NK80Z_2003  F3NK80Z_2003  P3NK80Z_2003  STP3NK80Z_2003  STF3NK80Z_2003  STD3NK80ZT4_2003  STD3NK80Z-1_2003 

ST-Microelectronics
STMicroelectronics

DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

■ TYPICAL RDS(on) = 3.8 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
■ LIGHTING

View
STD3NK80Z_2006 [N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH™ Power MOSFET ]

other parts : D3NK80Z_2006  F3NK80Z_2006  P3NK80Z_2006  STP3NK80Z_2006  STF3NK80Z_2006  STD3NK80ZT4_2006  STD3NK80Z-1_2006 

ST-Microelectronics
STMicroelectronics

Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

General features
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility

Applications
■ Switching application

View
STD3NK80Z [N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH™ Power MOSFET ]

other parts : P3NK80Z  F3NK80Z  D3NK80Z  STP3NK80Z  STF3NK80Z  STD3NK80ZT4  STD3NK80Z-1 

ST-Microelectronics
STMicroelectronics

Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Features
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability

Application
■ Switching applications

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