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STP80NE03L-0698

  

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STP80NE03L-06_1997 [N - CHANNEL ENHANCEMENT MODE "SINGLE FEATURE SIZE" POWER MOSFET ] ST-Microelectronics
STMicroelectronics

DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.005 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE 100 °C
■ APPLICATION ORIENTED CHARACTERIZATION

 APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc. )

 

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STP80NE03L-06 [N - CHANNEL ENHANCEMENT MODE "SINGLE FEATURE SIZE" POWER MOSFET ] ST-Microelectronics
STMicroelectronics

DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.005 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE 100 °C
■ APPLICATION ORIENTED CHARACTERIZATION

 APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc. )

 

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STP80NE03L-06 [N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET ]

other parts : STB40NE03L-20  STB50NE08  STB55NE06  STB55NE06L  STB60NE06-16  STD20NE06  STP16NE06L 

ST-Microelectronics
STMicroelectronics
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STP80NE03L-06_98 [N - CHANNEL 30V - 0.005Ω - 80A - TO-220 STripFET™ POWER MOSFET ] ST-Microelectronics
STMicroelectronics

DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.005 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE 100 °C
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc. )

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