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TIP117

  

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Match, Like TIP117 TIP117F TIP117G
Start with TIP117* TIP117F* TIP117G* TIP117T*
End *HTIP117
Included *HTIP117*

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CDIL
CDILCDIL
TIP117 PLASTIC POWER TRANSISTORS

Intended for use in Medium Power Linear and Switching Applications


other parts : TIP110 TIP115 TIP111 TIP116 TIP112 
Fairchild
FairchildFairchild
TIP117 PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base-Emitter Shunt Resistors

• High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A (Min.)
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Complementary to TIP110/111/112


other parts : TIP115 TIP116 
ST-Microelectronics
ST-MicroelectronicsST-Microelectronics
TIP117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION
The TIP110 and TIP112 are silicon Epitaxial-Base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications.
The complementary PNP types are TIP115 and TIP117.

■ STMicroelectronics PREFERRED SALESTYPES
■ COMPLEMENTARY PNP - NPN DEVICES
■ MONOLITHIC DARLINGTON CONFIGURATION
■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER


other parts : TIP110 TIP112 TIP115 
Savantic
SavanticSavantic
TIP117 Silicon PNP Darlington Power Transistors

DESCRIPTION
• With TO-220C package
• DARLINGTON
• High DC current gain
• Low collector saturation voltage
• Complement to type TIP110/111/112

APPLICATIONS
• For industrial use


other parts : TIP115 TIP116 
Boca-Semiconductor
Boca-SemiconductorBoca-Semiconductor
TIP117 2.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60−100 VOLTS 50 WATTS



other parts : TIP110 TIP111 TIP112 TIP115 TIP116 
DC-Components
DC-ComponentsDC-Components
TIP117 TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR

Description
Designed for use in general purpose amplifier and low-speed switching applications.

Pinning
1 = Base
2 = Collector
3 = Emitter

ON-Semiconductor
ON-SemiconductorON-Semiconductor
TIP117 DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80−100 VOLTS, 50 WATTS

Plastic Medium-Power Complementary Silicon Transistors

Designed for general−purpose amplifier and low−speed switching applications.

Features
• High DC Current Gain −
   hFE = 2500 (Typ) @ IC
       = 1.0 Adc
• Collector−Emitter Sustaining Voltage − @ 30 mAdc
   VCEO(sus) = 60 Vdc (Min) − TIP110, TIP115
             = 80 Vdc (Min) −


other parts : TIP110 TIP110G TIP111 TIP111G TIP112 TIP112G TIP115 TIP115G TIP116 TIP116G 
Transys
TransysTransys
TIP117 PNP SILICON POWER DARLINGTONS



other parts : TIP115 TIP116 
MCC
MCCMCC
TIP117_2008 PNP Epitaxial Silicon Darlington Transistors

Features
● High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.)
● Low Collector-Emitter Saturation Voltage
● Complementary to TIP110/111/112
● Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designate RoHS Compliant. See ordering information)
● Case Material: Molded Plastic. UL Flammability
   Classification Rating 94V-0 and MSL Rating 1


other parts : TIP115_2008 TIP116_2008 
KEC
KECKEC
TIP117 EPITAXIAL PLANAR PNP TRANSISTOR

MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.

FEATURES
• High DC Current Gain.
   : hFE=1000(Min.), @VCE=-4V, IC=-1A.
• Low Collector-Emitter Saturation Voltage.
• Complementary to TIP112.

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