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TN5325N8 [N-Channel Enhancement-Mode Vertical DMOS FETs ]

other parts : TN5325  TN5325K1  TN5325N3 

Supertex Inc

Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
❏ Low threshold – 2.0V max.
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Low CISS and fast switching speeds
❏ Excellent thermal stability
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches



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