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TSAL5300

  

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TSAL5300 [High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs ]

other parts : TSAL5300-MSZ 

Vishay
Vishay Semiconductors

DESCRIPTION
TSAL5300 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package.

FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Leads with stand-off
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition

APPLICATIONS
• Infrared remote control units with high power requirements
• Free air transmission systems
• Infrared source for optical counters and card readers

 

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TSAL5300-GSZ [High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs ]

other parts : TSAL5300-FSZ 

Vishay
Vishay Semiconductors

Description
TSAL5300 is a high efficiency infrared emitting diode in GaAs technology, molded in clear, bluegrey tinted plastic packages.

Features
• Extra high radiant power and radiant intensity
• Low forward voltage
• Suitable for high pulse current operation
• Standard T-1¾ (∅5 mm) package
• Angle of half intensity ϕ= ± 22°
• Peak wavelength λp= 940 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to ELV 2000/53/EC,RoHS 2002/95/EC and WEEE 2002/96/EC
 

View
TSAL5300-MSZ [High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs ]

other parts : TSAL5300 

Vishay
Vishay Semiconductors

DESCRIPTION
TSAL5300 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package.

FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Leads with stand-off
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition

APPLICATIONS
• Infrared remote control units with high power requirements
• Free air transmission systems
• Infrared source for optical counters and card readers

 

View
TSAL5300-FSZ [High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs ]

other parts : TSAL5300-GSZ 

Vishay
Vishay Semiconductors

Description
TSAL5300 is a high efficiency infrared emitting diode in GaAs technology, molded in clear, bluegrey tinted plastic packages.

Features
• Extra high radiant power and radiant intensity
• Low forward voltage
• Suitable for high pulse current operation
• Standard T-1¾ (∅5 mm) package
• Angle of half intensity ϕ= ± 22°
• Peak wavelength λp= 940 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to ELV 2000/53/EC,RoHS 2002/95/EC and WEEE 2002/96/EC
 

View
1

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