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MK45H01N50 [VERY FAST CMOS 512/1K/2K x 9 BiPORT FIFO ]

other parts : MK45H01  MK45H01K  MK45H01K12  MK45H01K25  MK45H01K35  MK45H01K50  MK45H01K65 

ST-Microelectronics
STMicroelectronics


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JAN1N5629 [1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR ]

other parts : 1N5629  1N5629A  1N5630  1N5630A  1N5631  1N5631A  1N5632 

Microsemi
Microsemi Corporation

DESCRIPTION
This popular Transient Voltage Suppressor (TVS) series for 1N5629 thru 1N5665A are JEDEC registered selections for unidirectional devices. All have the same high Peak Pulse Power rating of 1500 W with extremely fast response times. They are also available in military qualified selections as
described in the Features section herein.

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JAN1N5614 [HERMETIC AXIAL LEAD / MELF GENERAL PURPOSE RECTIFIER ]

other parts : 1N5614  1N5616  1N5618  1N5620  1N5622  JAN1N5616  JAN1N5618 

ETC2
Unspecified

[SENSITRON SEMICONDUCTOR]

DESCRIPTION: A 200/400/600/800/1000 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT
2000 NS GLASS RECTIFIER.

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IXTN61N50 [High Current Power MOSFET ]

other parts : IXTN58N50 

IXYS
IXYS CORPORATION

N-Channel Enhancement Mode

Features
• International standard package
• Isolation voltage 3000V (RMS)
• Low RDS(on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Low drain-to-case capacitance (<100 pF)
   - reduced RFI
• Low package inductance (< 10 nH)
   - easy to drive and to protect
• Aluminium Nitride Isolation
   - increased current ratings
  
Applications
• DC choppers
• AC motor speed controls
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched mode and resonant mode power supplies

Advantages
• Easy to mount
• Space savings
• High power density

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FQP11N50CF [500V N-Channel MOSFET ]

other parts : FQPF11N50CF 

Fairchild
Fairchild Semiconductor

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features
• 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V
• Low Gate Charge (typical 43 nC)
• Low Crss (typical 20pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• Fast Recovery Body Diode (typical 90ns)

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JAN1N5615US [VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS ]

other parts : 1N5615US  1N5617US  1N5619US  1N5621US  1N5623US  JAN1N5617US  JAN1N5619US 

Microsemi
Microsemi Corporation

DESCRIPTION
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/429 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N5615US thru 1N5623US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.

FEATURES
• Popular JEDEC registered 1N5615 to 1N5623 series
• Voidless hermetically sealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 200 to 1000 Volts.
• JAN, JANTX, JANTXV, and JANS available per MIL-PRF-19500/429
• Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (see separate data sheet for 1N5615US thru 1N5623US)

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NTHS0805N01N5002JE [NTC Thermistors, SMD 0402, 0603, 0805, 1206 Chip ]

other parts : NTHS0805N06N2801JE  NTHS0805N01N5002JP  NTHS0805N01N5002KP  NTHS0805N01N5002KE  NTHS0805N02N6801HE  NTHS0805N02N6801JE  NTHS0805N02N5001JP 

Vishay
Vishay Semiconductors

FEATURES
• Extended resistance values available in standard sizes
• Wraparound Ni barrier terminations with 100 % Sn
• Allows design flexibility for use with hybrid circuitry
• High-density monolithic construction with glass overcoat
• Sn90Pb10 plated terminations version available
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition

APPLICATIONS
Temperature sensing, protection and compensation in automotive, industrial, telecom and consumer applications. Examples are:
• Battery chargers
• Power suppliers
• Office equipment
• LCD compensation
• In-car entertainment

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R1111N501A [LOW NOISE 150mA LDO REGULATOR ]

other parts : R1111N  R1111N151A  R1111N151A-TL  R1111N151A-TR  R1111N151B  R1111N151B-TL  R1111N151B-TR 

Ricoh
RICOH Co.,Ltd.

The R1111N Series are voltage regulator ICs with high output voltage accuracy, extremely low supply current, low ON resistance, and high Ripple Rejection by CMOS process. Each of these voltage regulator ICs consists of a voltage reference unit, an error amplifier, resistors, a current limit circuit, and a chip enable circuit.

FEATURES
Ultra-Low Supply Current.........................................TYP. 35µA
Standby Mode ...........................................................TYP. 0.1µA
Low Dropout Voltage ................................................TYP. 0.2V(IOUT=100mA)
High Ripple Rejection ...............................................TYP. 70dB(f=1kHz)
Low Temperature-Drift Coefficient of
Output Voltage...........................................................TYP. ±100ppm/°C
Excellent Line Regulation .........................................TYP. 0.05%/V
High Output Voltage Accuracy..................................±2.0%
Excellent Line Transient Response and Load Transient Response
Small Package  ..........................................................SOT-23-5(Mini-mold)
Output Voltage...........................................................Stepwise setting with a step of 0.1V in the range of
                                                         1.5V to 5.0V is possible
Built-in chip enable circuit ( 2 types; A: “L” active , B: “H” active)
Pinout ........................................................................Similar to the LP2980

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11N50 [11A, 500V N-CHANNEL POWER MOSFET ]

other parts : 11N50G-TA3-T  11N50G-TF1-T  11N50G-TF3-T  11N50L-TA3-T  11N50L-TF1-T  11N50L-TF3-T 

UTC
Unisonic Technologies

„  DESCRIPTION
The UTC 11N50is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 11N50is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc.

FEATURES
* RDS(ON)=0.55Ω@ VGS=10V
* Fast Switching
* With 100% Avalanche Tested
 

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JAN1N5415_ [RECTIFIERS ]

other parts : JANTX1N541X  1N5415_  1N5416_  1N5417_  1N5418_  1N5419_  1N5420_ 

Microsemi
Microsemi Corporation


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