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ASI2010 [NPN SILICON RF POWER TRANSISTOR ]

other parts : AJT006  AJT015  AJT030  AJT150  ALR006  ALR030  ALR100 

ASI
Advanced Semiconductor
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SR20100C [SCHOTTKY BARRIER RECTIFIER ]

other parts : SR20150C  SR20200C  SR2020C  SR2030C  SR2035C  SR2040C  SR2045C 

Rectron
Rectron Semiconductor

VOLTAGE RANGE 20 to 200 Volts  CURRENT 20.0 Ampere

FEATURES
* Low switching noise
* Low forward voltage drop
* Low thermal resistance
* High current capability
* High switching capability
* High surge capabitity
* High reliability

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V20101U [“ZNR” Transient/Surge Absorbers (Type D) ]

other parts : ERZV05D101  ERZV05D121  ERZV05D151  ERZV05D180  ERZV05D201  ERZV05D220  ERZV05D221 

Panasonic
Panasonic Corporation

Features
1. Large withstanding surge current capability in compact sizes
2. Large “Energy Handling Capability”absorbing transient overvoltages in compact sizes
3. Wide range of varistor voltages
4. RoHS compliant

Recommended Applications
1. Transistor, diode, IC, thyristor or triac semiconductor protection
2. Surge protection in consumer electronic equipment
3. Surge protection in communication, measuring or controller electronics
4. Surge protection in electronic home appliances, gas or petroleum appliances

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STPR2010CT [Ultra Fast Recovery Diodes ]

other parts : STPR2020CT 

Sirectifier
Sirectifier Electronics

FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity

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SPVF120100 [Detector Switch Two-way Operation Type ]

other parts : SPPB  SPPW8  SPVE  SPVF  SPVF110100  SPVF130100  SPVF140100 

ETC
Unspecified

[ALPS]

Detector Switch Two-way Operation Type

Compact and user friendly, detectable from both horizontal and vertical direction.

 

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AT-42010 [Up to 6 GHz Medium Power Silicon Bipolar Transistor ] HP
HP => Agilent Technologies

Description
Hewlett-Packard’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-to emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω up to 1 GHz , makes this device easy to use as a low noise amplifier.
The AT-42010 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion implantation, self-alignment techniques, and gold metalization in the fabrication of this device.

Features
• High Output Power:
   12.0 dBm Typical P1 dB at 2.0 GHz
   20.5 dBm Typical P1 dBat 4.0 GHz
• High Gain at 1 dB Compression:
   14.0 dB Typical G1 dBat 2.0 GHz
   9.5 dB Typical G1 dBat 4.0 GHz
• Low Noise Figure:
   1.9 dB Typical NFOat 2.0 GHz
• High Gain-Bandwidth Product: 8.0 GHz Typical fT
• Hermetic Gold-ceramic Microstrip Package

 

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VB20100S [High-Voltage Trench MOS Barrier Schottky Rectifier ]

other parts : V20100S-E3  V20100S-E3-4W  V20100S-E3/4W  VB20100S-E3  VB20100S-E3-4W  VB20100S-E3-8W  VB20100S-E3/4W 

Vishay
Vishay Semiconductors

FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS
  For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.

 

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MBR20100CT [NCE MOS Barrier Rectifier ] NCEPOWER
Wuxi NCE Power Semiconductor Co., Ltd

Description
This Schottky rectifier has been optimized for low reverse leakage at high temperature, this product special design for high forward and reverse surge capability

General Features
● VRRM 100V
● IF(AV) 2 x 10 A
● High frequency operation
● Low forward voltage drop
● Center tap package
● Lead free product is acquired
● High Junction Temperature
● High ESD Protection, IEC Model ±10KV
● High Forward & Reverse Surge capability

Application
● Power Supply − Output Rectification
● Power Management
● Instrumentation

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SK20100CD2 [Surface Mount Schottky Rectifiers– Common Cathode ]

other parts : SK2020CD2  SK2030CD2  SK2040CD2  SK2045CD2  SK2050CD2  SK2060CD2  SK2080CD2 

Diotec
Diotec Semiconductor Germany

Nominal Current                          20 A
Repetitive peak reverse voltage       20...100 V
Plastic case                                 TO-263
Weight approx.                            1.6 g
Plastic material has UL classification 94V-0
Standard packaging taped and reeled

 

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MBR20100CT [20.0 AMPS. Schottky Barrier Rectifiers ]

other parts : MBR20150CT  MBR20200CT  MBR2035CT  MBR2045CT  MBR2050CT  MBR2060CT  MBR2050 

TSC
TSC Corporation

Voltage Range 35 to 200 Volts Current 20.0 Amperes

Features
Plastic material used carries Underwriters Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
                      260°C/10 seconds,0.25”(6.35mm)from case

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