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ASI2010 [NPN SILICON RF POWER TRANSISTOR ]

other parts : AJT006  AJT015  AJT030  AJT150  ALR006  ALR030  ALR100 

ASI
Advanced Semiconductor
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MDA2010 [CYFROWE UKLADY SCALONE TTL ]

other parts : 74132PC  74145PC  74174PC  74175PC  74181PC  75107PC  75108PC 

ETC
Unspecified

CYFROWE UKLADY SCALONE TTL

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PS2010 [PLASTIC SILICON RECTIFIER ]

other parts : PS200  PS201  PS202  PS204  PS206  PS208 

PanJit
PANJIT INTERNATIONAL

VOLTAGE 50 to 1000 Volts CURRENT - 2.0 Amperes

FEATURES
• Low cost
• High current capability
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• 2.0 ampere operation at TA = 55°C with no thermal runaway
• Exceeds environmental standards of MIL-S-19500/228
• Low leakage

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CRCW2010 [Standard Thick Film Chip Resistors ]

other parts : CRCW0402  CRCW0402150KFKEA  CRCW0402150KFKEB  CRCW0402150KFKEC  CRCW0402150KFKED  CRCW0402150KFKEE  CRCW0402150KFKEF 

Vishay
Vishay Semiconductors

FEATURES
● Stability ΔR/R = 1 % for 1000 h at 70 °C
● 2 mm pitch packaging option for 0603 size
● Pure tin solder contacts on Ni barrier layer
   provides compatibility with lead (Pb)-free and lead
   containing soldering processes
● Metal glaze on high quality ceramic
● AEC-Q200 qualified
● Material categorization: For definitions of compliance
   please see www.vishay.com/doc?99912

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AT-42010 [Up to 6 GHz Medium Power Silicon Bipolar Transistor ] AVAGO
Avago Technologies

Description
Avago’s AT-42010 is a general purpose NPN bipolar tran sistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter fnger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifer, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50Ω up to 1 GHz, makes this device easy to use as a low noise amplifer.
The AT-42010 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device.

Features
• High Output Power:
   21.0 dBm Typical P1 dB at 2.0 GHz
   20.5 dBm Typical P1 dB at 4.0 GHz
• High Gain at 1 dB Compression:
   14.0 dB Typical G1 dB at 2.0 GHz
   9.5 dB Typical G1 dB at 4.0 GHz
• Low Noise Figure:
   1.9 dB Typical NFO at 2.0 GHz
• High Gain-Bandwidth Product: 8.0 GHz Typical fT
• Hermetic Gold-ceramic Microstrip Package

 

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P2010 [High Precision Wraparound - Wide Ohmic Value Range Thin Film Chip Resistors, Sulfur Resistant ]

other parts : P0302  P0402  P0505  P0603  P0603Y1501LGT  P0805  P1005 

Vishay
Vishay Semiconductors

For low noise and precision applications, superior stability, low temperature coefficient of resistance, and low voltage coefficient, Vishay Sfernice’s proven precision thin film wraparound resistors exceed requirements of MIL-PRF-55342G characteristics Y ± 10 ppm/°C (-55 °C; +155 °C) down to ± 5 ppm/°C (-55 °C; +155 °C).

FEATURES
• Load life stability 0.02 % typical at 8000 h
   at 70 °C under Pd (0.033 % maximum)
• Low temperature coefficient down to 5 ppm/°C
   (-55 °C; +155 °C)
• Very low noise < - 35 dB and voltage coefficient
   < 0.01 ppm/V
• Wide resistance range: 10 Ω to 200 MΩ
   depending on size
• Tolerances to ± 0.01 %
• In lot tracking ≤ 5 ppm/°C
• Termination: Thin film technology
• Short circuits (jumpers) r < 50 mR, I < 2 A, see PZR
   datasheet (www.vishay.com/doc?53053)
• Withstand moisture resistance test of AEC-Q200
• Sulfur resistant (per ASTM B809-95 humid vapor test)
• Material categorization: for definitions of compliance
   please see www.vishay.com/doc?99912

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322010 [Axial Lead and Cartridge Fuses ]

other parts : 307004  307006  307009  307014  307020  307030  30707.5 

Littelfuse
Littelfuse, Inc

3AB Very Fast-Acting Fuse 322 Series

SFE Fast-Acting Type 307 Series

For protection of silicon controlled rectifiers and similar solid-state devices.

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FCR2010 [Fusible Chip Resistors ]

other parts : FCR00603  FCR0805  FCR1206  FCR1210  FCR00603J1R0  FCR00603J50R  FCR00603J100R 

Te
TE Connectivity

Precious metal terminations are screen printed onto a ceramic base and fired. The resistive element is screen printed and fired and the passivation layer added. Each resistor is trimmed to tolerance by sand blasting. The prescribed tile is broken into strips, the end plating is fired on and the strips broken into individual components. Final termination is made by electroplating.

Key Features
■ Chip resistors with known fusible characteristics.
   These resistors will not produce flames or smoke during fusing
■ Suitable for battery operated circuits
■ Case sizes 0603, 0805, 1206, 1210 and 2010
■ FCR chip resistors are suitable for most applications,
   including high frequency operation

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RTD2010 [Flat Panel Display Controller ] Realtek
Realtek Semiconductor

General Description
The Realtek RTD2010 is a highly-integrated single chip IC controller solution for producing real time, top quality digital video and computer graphic images on LCD monitor/flat panel displays, such as XGA LCD monitors. LCD monitors and flat panel displays provide a sharp, flicker free display while saving space and energy for desktop PC applications. The RTD2010 provides an ideal interface between industry standard digital graphics controllers and a wide variety of LCD panel devices. Flat panel devices using the RTD2010 can support all incoming VESA modes and interface to any TFT LCD device, up to XGA (1024x768) resolution.

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GSIB2010 [SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER ]

other parts : GSIB2005  GSIB20100  GSIB2020  GSIB2040  GSIB2060  GSIB2080 

ETC2
Unspecified

[Gulf Semiconductor]

Voltage: 50 to 1000V Current: 20.0A

Features
Glass passivated chip junction
Ideal for printed circuit board
High surge current capability
High case dielectric strength

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