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ASI2010 [NPN SILICON RF POWER TRANSISTOR ]

other parts : AJT006  AJT015  AJT030  AJT150  ALR006  ALR030  ALR100 

ASI
Advanced Semiconductor
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MBR20100CT [NCE MOS Barrier Rectifier ] NCEPOWER
Wuxi NCE Power Semiconductor Co., Ltd

Description
This Schottky rectifier has been optimized for low reverse leakage at high temperature, this product special design for high forward and reverse surge capability

General Features
● VRRM 100V
● IF(AV) 2 x 10 A
● High frequency operation
● Low forward voltage drop
● Center tap package
● Lead free product is acquired
● High Junction Temperature
● High ESD Protection, IEC Model ±10KV
● High Forward & Reverse Surge capability

Application
● Power Supply − Output Rectification
● Power Management
● Instrumentation

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FR2010C [Fast Recovery Rectifiers ]

other parts : FR2020C  FR2040C  FR2060C 

LUGUANG
Shenzhen Luguang Electronic Technology Co., Ltd

VOLTAGE RANGE: 100 --- 600 V
CURRENT: 20 A

Features
◇ Low cost
◇ Diffused junction
◇ Low leakage
◇ Low forward voltage drop
◇ High current capability and similar solvents
◇ The plastic material carries U/L recognition 94V-0
◇ Easily cleaned with Freon,Alcohol,Isopropanol

 

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SK20100CD2 [Surface Mount Schottky Rectifiers– Common Cathode ]

other parts : SK2020CD2  SK2030CD2  SK2040CD2  SK2045CD2  SK2050CD2  SK2060CD2  SK2080CD2 

Diotec
Diotec Semiconductor Germany

Nominal Current                          20 A
Repetitive peak reverse voltage       20...100 V
Plastic case                                 TO-263
Weight approx.                            1.6 g
Plastic material has UL classification 94V-0
Standard packaging taped and reeled

 

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TPS2010 [POWER-DISTRIBUTION ]

other parts : TPS2010D  TPS2010DG4  TPS2010DR  TPS2010DRG4  TPS2010PW  TPS2010PWLE  TPS2010Y 

TI
Texas Instruments

description
The TPS201x family of power-distribution switches is intended for applications where heavy capacitive loads and short circuits are likely to be encountered. The high-side switch is a 95-mΩ N-channel MOSFET. Gate drive is provided by an internal driver and charge pump designed to control the power switch rise times and fall times to minimize current surges during switching. The charge pump operates at 100 kHz, requires no external components, and allows operation from supplies as low as 2.7 V. When the output load exceeds the current-limit threshold or a short circuit is present, the TPS201x limits the output current to a safe level by switching into a constant-current mode.

 95-mΩ Max (5.5-V Input) High-Side MOSFET Switch With Logic Compatible Enable Input
 Short-Circuit and Thermal Protection
 Typical Short-Circuit Current Limits:
   0.4 A, TPS2010; 1.2 A, TPS2011;
   2 A, TPS2012; 2.6 A, TPS2013
 Electrostatic-Discharge Protection, 12-kV Output, 6-kV All Other Terminals
 Controlled Rise and Fall Times to Limit Current Surges and Minimize EMI
 SOIC-8 Package Pin Compatible With the Popular Littlefoot Series When GND Is Connected
 2.7-V to 5.5-V Operating Range
 10-µA Maximum Standby Current
 Surface-Mount SOIC-8 and TSSOP-14 Packages
 –40°C to 125°C Operating Junction Temperature Range

 

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MBR20100CT [20.0 AMPS. Schottky Barrier Rectifiers ]

other parts : MBR20150CT  MBR20200CT  MBR2035CT  MBR2045CT  MBR2050CT  MBR2060CT  MBR2050 

TSC
TSC Corporation

Voltage Range 35 to 200 Volts Current 20.0 Amperes

Features
Plastic material used carries Underwriters Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
                      260°C/10 seconds,0.25”(6.35mm)from case

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VB20100S [High-Voltage Trench MOS Barrier Schottky Rectifier ]

other parts : V20100S-E3  V20100S-E3-4W  V20100S-E3/4W  VB20100S-E3  VB20100S-E3-4W  VB20100S-E3-8W  VB20100S-E3/4W 

Vishay
Vishay Semiconductors

FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS
  For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.

 

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AT-42010 [Up to 6 GHz Medium Power Silicon Bipolar Transistor ] HP
HP => Agilent Technologies

Description
Hewlett-Packard’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-to emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω up to 1 GHz , makes this device easy to use as a low noise amplifier.
The AT-42010 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion implantation, self-alignment techniques, and gold metalization in the fabrication of this device.

Features
• High Output Power:
   12.0 dBm Typical P1 dB at 2.0 GHz
   20.5 dBm Typical P1 dBat 4.0 GHz
• High Gain at 1 dB Compression:
   14.0 dB Typical G1 dBat 2.0 GHz
   9.5 dB Typical G1 dBat 4.0 GHz
• Low Noise Figure:
   1.9 dB Typical NFOat 2.0 GHz
• High Gain-Bandwidth Product: 8.0 GHz Typical fT
• Hermetic Gold-ceramic Microstrip Package

 

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RB2010_02 [2.0A BRIDGE RECTIFIER ]

other parts : RB200_02  RB201_02  RB202_02  RB204_02  RB206_02  RB208_02 

Won-Top
Won-Top Electronics

Features
● Diffused Junction
● Low Forward Voltage Drop
● High Current Capability
● High Reliability
● High Surge Current Capability
● Ideal for Printed Circuit Boards
● UL Recognized File # E157705

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SR20100CS [SCHOTTKY BARRIER RECTIFIER ]

other parts : SR20150CS  SR20200CS  SR2020CS  SR2030CS  SR2035CS  SR2040CS  SR2045CS 

Rectron
Rectron Semiconductor

VOLTAGE RANGE 20 to 200 Volts CURRENT 20.0 Ampere

FEATURES
* Low switching noise
* Low forward voltage drop
* Low thermal resistance
* High current capability
* High switching capability
* High surge capabitity
* High reliability

 

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