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SB2020CT [20A Dual Schottky Barrier Rectifier ]

other parts : SB20100CT  SB2030CT  SB2040CT  SB2045CT  SB2050CT  SB2060CT  SB2080CT 

Shenzhen Luguang Electronic Technology Co., Ltd

20A Dual Schottky Barrier Rectifier

! Schottky Barrier Chip
! Guard Ring for Transient Protection
! Low Forward Voltage Drop
! Low Reverse Leakage Current
! High Surge Current Capability
! Plastic Material has UL Flammability Classification 94V-O

MBRF20200CTC0 [Dual Common Cathode Schottky Rectifier ]

other parts : MBRF20100CT_  MBRF20150CT_  MBRF20200CT_  MBRF2035CT_  MBRF2045CT_  MBRF2050CT_  MBRF2060CT_ 

TSC Corporation

- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition

VI20200G-E3-4W [Dual High-Voltage Trench MOS Barrier Schottky Rectifier ]

other parts : V20200G  V20200G-E3-4W  V20200G-E3/4W  VB20200G  VB20200G-E3-4W  VB20200G-E3-8W  VB20200G-E3/4W 

Vishay Semiconductors

Ultra Low VF = 0.62 V at IF = 5 A

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

  For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.



other parts : B20200G  MBRF20200CTG 

Kersemi Electronic Co., Ltd.

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes.

• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Matched Dual Die Construction
• High Junction Temperature Capability
• High dv/dt Capability
• Guardring for Stress Protection
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Electrically Isolated. No Isolation Hardware Required.
• Pb−Free Package is Available*

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

TMS570LS20206BSZWTQQ1R [16/32-BIT RISC Flash Microcontroller ]

other parts : TMS570LS10106  TMS570LS10106ASPGEQQ1  TMS570LS10106ASPGEQQ1R  TMS570LS10106ASZWTQQ1  TMS570LS10106ASZWTQQ1R  TMS570LS10106BSPGEQQ1  TMS570LS10106BSPGEQQ1R 

Texas Instruments

The TMS570LS series is a high performance automotive grade microcontroller family which has been certified for use in IEC 61508 SIL3 safety systems. The safety architecture includes Dual CPUs in lockstep, CPU and Memory Built-In Self Test (BIST) logic, ECC on both the Flash and the data SRAM, parity on peripheral memories, and loop back capability on peripheral IOs.
The TMS570LS family integrates the ARMç Cortexâ-R4F Floating Point CPU which offers an efficient 1.6 DMIPS/MHz, and has configurations which can run up to 160 MHz providing more than 250 DMIPS. The TMS570LS series also provides different Flash (1MB or 2MB) and data SRAM (128KB or 160KB) options with single bit error correction and double bit error detection.

• High-Performance Automotive Grade Microcontroller for Safety Critical Applications
   – Certified for use in SIL3 Applications
   – Dual CPUs running in Lockstep
   – ECC on Flash and SRAM
   – CPU and Memory BIST (Built-In Self Test)
   – Error Signaling Module (ESM) w/ Error Pin
• ARM® Cortex™-R4F 32-Bit RISC CPU
   – Efficient 1.6 DMIPS/MHz with 8-stage pipeline
   – Floating Point Unit with Single/Double Precision
   – Memory Protection Unit (MPU)
   – Open Architecture With Third-Party Support
• Operating Features
   – Up to 160-MHz System Clock
   – Core Supply Voltage (VCC): 1.5 V
   – I/O Supply Voltage (VCCIO): 3.3 V
• Integrated Memory
   – 1M-Byte or 2M-Byte Flash with ECC
   – 128K-Byte or 160K-Byte RAM with ECC
• Multiple Communication interfaces including FlexRay, CAN, and LIN
• NHET Timer and 2x 12-bit ADCs
• External Memory Interface (EMIF)
   – 16bit Data, 22bit Address, 4 Chip Selects
• Common TMS470/570 Platform Architecture
   – Consistent Memory Map across the family
   – Real-Time Interrupt (RTI) OS Timer
   – Vectored Interrupt Module (VIM)
   – Cyclic Redundancy Checker (CRC, 2 Channels)
• Direct Memory Access (DMA) Controller
   – 32 DMA requests and 16 Channels/ Control Packets
   – Parity on Control Packet Memory
   – Dedicated Memory Protection Unit (MPU)
• Frequency-Modulated Zero-Pin Phase-Locked Loop (FMzPLL)-Based Clock Module
   – Oscillator and PLL clock monitor
• Up to 115 Peripheral IO pins
   – 16 Dedicated GIO - 8 w/ External Interrupts
   – Programmable External Clock (ECLK)
• Communication Interfaces
   – Three Multi-buffered Serial Peripheral Interface (MibSPI) each with:
• Four Chip Selects and one Enable pin
• 128 buffers with parity
• One with parallel mode
   – Two UART (SCI) interfaces with Local Interconnect Network Interface (LIN 2.0)
   – Three CAN (DCAN) Controller
• Two with 64 mailboxes, one with 32
• Parity on mailbox RAM
   – Dual Channel FlexRay™ Controller
• 8K-Byte message RAM with parity
• Transfer Unit with MPU and parity
• High-End Timer (NHET)
   – 32 Programmable I/O Channels
   – 128 Words High-End Timer RAM with parity
   – Transfer Unit with MPU and parity
• Two 12-Bit Multi-Buffered ADCs (MibADC)
   – 24 total ADC Input channels
   – Each has 64 Buffers with parity
• Trace and Calibration Interfaces
   – Embedded Trace Module (ETMR4)
   – Data Modification Module (DMM)
   – RAM Trace Port (RTP)
   – Parameter Overlay Module (POM)
• On-Chip emulation logic including IEEE 1149.1 JTAG, Boundary Scan and ARM Coresight components
• Full Development Kit Available
   – Development Boards
   – Code Composer Studio Integrated Development Environment (IDE)
   – HaLCoGen Code Generation Tool
   – HET Assembler and Simulator
   – nowFlash Flash Programming Tool
• Packages Supported
   – 144-Pin Quad Flat Pack (PGE) [Green]
   – 337-Pin Ball Grid Array (ZWT) [Green]
• Community Resources
   – TI E2E Community  


PTB20200 [30 Watts, 380-500 MHz Cellular Radio RF Power Transistor ] Ericsson

The 20200 is a class A, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380-500 MHz. Rated at 30 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.

 30 Watt, 380–500 MHz
 Class AB Characteristics
 Gold Metallization
 Silicon Nitride Passivated

145602020000829 [Board to Board & Mezzanine Connectors 40P VERT 1.5mm RCPT SMT AU W/O MTL TAB ]

other parts : 145602020001829  145602020002829  145602020003829  145602024000829  145602024001829  145602024002829  145602024003829 

AVX Corporation

Series 5602 is a two-piece 0.4mm pitch, PCB stacking connector. Offered at a 1.5mm stack height, Series 5602 is ideal for high density packaging applications. Market applications include mobile PC’s, PDA’s, DVD, Cell Phones and Digital Cameras.

0.4mm fine pitch and low profile connector, with stacking height of 1.5mm. These features result in the highest density stacking connector in the industry.
The connector design provides for an audible click, whichconfirms that the contacts are properly mated.
Offered with, and without, metal strain relief and boss.
Designed to prevent solder wicking.
Enclosed SMT contacts, provide for high density routing, by allowing traces to be located under the connector.
Ideal for FPC to PCB connections.
Compatible with high temperature, lead free, soldering processes.
Packaging consists of 2,000 connectors per reel.

Series 5602
Mated Height 1.5mm
Pitch 0.4mm
Current 0.4A Max
Voltage 50V Max
D.W. Voltage 250V Max/min.
Mating Cycles 30

5962-1320201VXC [1.5-V to 7-V Input, 3-A, Radiation-Hardened Ultra-Low Dropout (LDO) Regulator ]

other parts : 5962R1320201VXC  TPS7H1101-RHA  TPS7H1101-SP 

Texas Instruments

The TPS7H1101-SP is a radiation-hardened LDO linear regulator that uses a PMOS pass element configuration. This device operates over a wide range of input voltage, from 1.5 V to 7 V while offering excellent PSRR. The TPS7H1101-SP features a precise and programmable foldback current limit implementation with a very-wide adjustment range. To support the complex power requirements of FPGAs, DSPs, or microcontrollers, the TPS7H1101-SP provides enable on and off functionality, programmable SoftStart, current sharing capability, and a PowerGood open-drain output.

• 5962R13202:
   – Radiation Hardness Assurance (RHA) up to
      TID 100 krad (Si)
   – Total Ionizing Dose 100 krad (Si)
   – ELDRS-Free 100 krad (Si)
   – Dose Rate 10 mRAD (si)/s
   – Single Event Latchup (SEL) Immune to
      LET = 85 MeV-cm2/mg
   – SEB and SEGR Immune to
      LET = 85 MeV-cm2/mg
   – SET/SEFI Onset Threshold > 40 MeV-cm2/mg,
      See Radiation Report for Details
   – Specifically Designed to Always Upset Low
      to Avoid Damage to Critical Downstream
   – SET/SEFI Cross-Section Plot, See Radiation
      Report for Details
• Ultra-Low VIN Range: 1.5 V to 7 V
• 3-A Maximum Output Current
• Current Share/Parallel Operation to Provide up to
   6-A Output Current
• Stable With Ceramic Output Capacitor
• ±2% Accuracy Over Line, Load, and Temperature
• Programmable Soft-Start Through External
• Input Enable and Power-Good Output for Power
• Ultra-Low Dropout LDO Voltage:
   62 mV at 1 A (25°C), VOUT = 1.8 V
• Low Noise:
   20.33 µVRMS VIN = 2 V, VOUT = 1.8 V at 3 A
• PSRR: Over 45 dB at 1 kHz
• Excellent Load/Line Transient Response
• Foldback Current Limit
• See the Tools & Software Tab
• Thermally-Enhanced CFP Package (0.6°C/W RθJC)

• Space Satellite Point of Load Supply for FPGAs,
   Microcontrollers, ASICs, and Data Converters
   • Space Satellite Payloads
• Radiation-Hardened Low-Noise Linear Regulator
   Power Supply for RF, VCOs, Receivers, and
• Clean Analog Supply Requirements
• Available in Military (–55°C to 125°C)
   Temperature Range
• Engineering Evaluation (/EM) Samples are

STPR2020CT [Ultra Fast Recovery Diodes ]

other parts : STPR2010CT 

Sirectifier Electronics

* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity

MBR20200CTG [SWITCHMODE Power Rectifier ]

other parts : MBR20200CT 

Kersemi Electronic Co., Ltd.

SWITCHMODE Power Rectifier
Dual Schottky Rectifier

Features and Benefits
•Low Forward Voltage
•Low Power Loss/High Efficiency
•High Surge Capacity
•175°C Operating Junction Temperature
•20 A Total (10 A Per Diode Leg)
•Pb−Free Package is Available

•Power Supply −Output Rectification
•Power Management

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