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2SC360

  

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Manufacturer Part no Description View
Toshiba
Toshiba
2SC3606 SILICON NPN EPITAXIAL PANAR TYPE TRANSISTOR

VHF ~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS

Kexin
KEXIN Industrial
2SC3606 Silicon NPN Epitaxial Planar Type

Features
Low noise figure, high gain.
NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)

NEC
NEC => Renesas Technology
2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

The 2SC3603 is an NPN epitaxial transistor designed for low noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

FEATURES
• Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz
• High power gain : GA = 10 dB TYP. @ f = 2.0 GHz

 

Toshiba
Toshiba
2SC3605 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE

VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS

FEATURES:
● Low Noise Figure, High Gain
● NF = 1.1dB, |S21e|2 = 10dB (f = 1GHz)

 


other parts : C3605 
SANYO
SANYO -> Panasonic
2SC3601 PNP/NPN Epitaxial Planar Silicon Transistors(Ultrahigh-Definition CRT Display Video Output Applications)

Applications
· Ultrahigh-definition CRT display.
· Video output.
· Color TV chroma output.
· Wide-band amp.


Features
· High fT: fTtyp=400MHz.
· High breakdown voltage : VCEO≥200V.
· Small reverse transfer capacitance and excellent high-frequency characteristic
: Cre=2.0pF (NPN), 2.5pF (PNP).
· Complementary PNP and NPN types.
· Adoption of


other parts : 2SA1407 2SA1407C 2SA1407D 2SA1407E 2SA1407F 2SC3601C 2SC3601D 2SC3601E 2SC3601F A1407 
Toshiba
Toshiba
2SC3608 GaAs N-Channel MOS FET / UHF RF Application

3SK121 datasheet pdf


other parts : 2SC2804 2SC2805 2SC2806 2SC2876 2SC3137 2SC3172 2SC3302 2SC3548 2SC3602 3SK101 
Toshiba
Toshiba
2SC3602 GaAs N-Channel MOS FET / UHF RF Application

3SK121 datasheet pdf


other parts : 2SC2804 2SC2805 2SC2806 2SC2876 2SC3137 2SC3172 2SC3302 2SC3548 2SC3608 3SK101 
Twtysemi
TY Semiconductor
2SC3606 SILICON NPN EPITAXIAL PANAR TYPE TRANSISTOR

Features
Low noise figure, high gain.
NF = 1.1dB, |S21e|2= 11dB (f = 1 GHz)

NEC
NEC => Renesas Technology
2SC3604 NPN EPITAXIAL SILICON TRANSISTOR

The 2SC3604 is an NPN epitaxial transistor designed for low noise amplification at 1.0 to 6.0 GHz.

This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

FEATURES

• Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz

• High power gain : GA= 12 dB TYP. @ f = 2.0 GHz

 


other parts : C3604 
SANYO
SANYO -> Panasonic
2SC3600 Ultrahigh-Definition CRT Display Video Output Applications

· Ultrahigh-definition CRT display.
· Video output.
· Color TV chroma output.
· Wide-band amp.

Features
· High fT: fTtyp=400MHz.
· High breakdown voltage : VCEO≥200V.
· Small reverse transfer capacitance and excellent HF response
   : Cre = 1.4pF (NPN), 1.7pF (PNP).
· Complementary PNP and NPN types.
· Adoption of FBET process.


other parts : 2SA1406 A1406 C3600 

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