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2SC360

  

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2SC3600 [(2SA1406/2SC3600) PNP/NPN Epitaxial Planar Silicon Transistors ]

other parts : 2SA1406  A1406  C3600 

SANYO
SANYO -> Panasonic

Ultrahigh-Definition CRT Display Video Output Applications

Features
• High fT : fT typ=400MHz.
• High breakdown voltage : VCEO≥200V.
• Small reverse transfer capacitance and excellent HF
   response
   : Cre=1.4pF (NPN), 1.7pF (PNP).
• Complementary PNP and NPN types.
• Adoption of FBET process.

Applications
• Ultrahigh-definition CRT display.
• Video output.
• Color TV chroma output.
• Wide-band amp.

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2SC3601 [PNP/NPN Epitaxial Planar Silicon Transistors(Ultrahigh-Definition CRT Display Video Output Applications) ]

other parts : 2SA1407  2SA1407C  2SA1407D  2SA1407E  2SA1407F  2SC3601C  2SC3601D  2SC3601E  2SC3601F  A1407 

SANYO
SANYO -> Panasonic

Applications
· Ultrahigh-definition CRT display.
· Video output.
· Color TV chroma output.
· Wide-band amp.


Features
· High fT: fTtyp=400MHz.
· High breakdown voltage : VCEO≥200V.
· Small reverse transfer capacitance and excellent high-frequency characteristic
: Cre=2.0pF (NPN), 2.5pF (PNP).
· Complementary PNP and NPN types.
· Adoption of FBET process.

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2SC3602 [GaAs N-Channel MOS FET / UHF RF Application ]

other parts : 2SC2804  2SC2805  2SC2806  2SC2876  2SC3137  2SC3172  2SC3302  2SC3548  2SC3608  3SK101 

Toshiba
Toshiba

3SK121 datasheet pdf

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2SC3603 [NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION ] NEC
NEC => Renesas Technology

The 2SC3603 is an NPN epitaxial transistor designed for low noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

FEATURES
• Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz
• High power gain : GA = 10 dB TYP. @ f = 2.0 GHz

 

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2SC3604 [NPN EPITAXIAL SILICON TRANSISTOR ]

other parts : C3604 

NEC
NEC => Renesas Technology

The 2SC3604 is an NPN epitaxial transistor designed for low noise amplification at 1.0 to 6.0 GHz.

This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

FEATURES

• Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz

• High power gain : GA= 12 dB TYP. @ f = 2.0 GHz

 

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2SC3605 [TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE ]

other parts : C3605 

Toshiba
Toshiba

VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS

FEATURES:
● Low Noise Figure, High Gain
● NF = 1.1dB, |S21e|2 = 10dB (f = 1GHz)

 

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2SC3606 [SILICON NPN EPITAXIAL PANAR TYPE TRANSISTOR ] Twtysemi
TY Semiconductor

Features
Low noise figure, high gain.
NF = 1.1dB, |S21e|2= 11dB (f = 1 GHz)

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2SC3606 [SILICON NPN EPITAXIAL PANAR TYPE TRANSISTOR ] Toshiba
Toshiba

VHF ~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS

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2SC3606 [Silicon NPN Epitaxial Planar Type ] Kexin
KEXIN Industrial

Features
Low noise figure, high gain.
NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)

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2SC3607 [Silicon NPN Epitaxial Planar Type Transistor ] Toshiba
Toshiba

VHF~UHF Band Low Noise Amplifier Applications

Low noise figure, high gain.
NF = 1.1dB, |S21e|2= 9.5dB (f = 1 GHz)

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