VHF~UHF Band Low Noise Amplifier Applications

•  Low noise figure, high gain.
•  NF = 1.1dB, |S21e|²= 12dB (f = 1 GHz)

TO-220 class high output power package with Pc 60 to 100W.

DESCRIPTION
• With TO-3PL package
• Complement to type 2SA1943

APPLICATIONS
• High current switching
• Recommended for 100W high fidelity audio
   frequency amplifier output stage

„DESCRIPTION
Switching Regulator and High Voltage Switching Applications
High-Speed DC-DC Converter Applications

FEATURES
* Excellent switching times: tR= 0.7μs(MAX), tF= 0.5μs(MAX)
* High collectors breakdown voltage: VCEO= 800V

2SC5426 1500V 10A 50W Hitachi Transistor TO-3P

2SC5426, Reference datasheet : NTE2365 = BU2520DF

NPN Epitaxial Planar Silicon Transistor

Features
• High gain : |S21e|²=10.5dB typ (f=1GHz).
• High cut-off frequency : fT=5.2GHz typ.
• Ultrasmall, slim flat-lead package (1.4mm✕0.8mm✕0.6mm).
• Halogen free compliance.

NPN Triple Diffused Planar Silicon Transistor

Features
· High speed (tf=100ns typ).
· High breakdown voltage (VCBO=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.

DESCRIPTION
·With TO-3PL package
·Complement to type 2SA1943

APPLICATIONS
·High current switching
·Recommended for 100W high fidelity audio frequency amplifier output stage

„DESCRIPTION
Switching Regulator and High Voltage Switching Applications
High-Speed DC-DC Converter Applications

FEATURES
* Excellent switching times: tR= 0.7μs(MAX), tF= 0.5μs(MAX)
* High collectors breakdown voltage: VCEO= 800V

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES
• Contains same chip as 2SC5010
• Flat-lead 3-pin thin-type ultra super minimold package