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2SC5

  

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End *V2SC5 *12SC5 *P2SC5 *F2SC5
Included *2SC50* *2SC56* *2SC5D* *2SC5L* *2SC5Y*
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2SC5066FT [Silicon NPN Epitaxial Planar Type Transistor ] Toshiba
Toshiba

VHF~UHF Band Low Noise Amplifier Applications

•  Low noise figure, high gain.
•  NF = 1.1dB, |S21e|2= 12dB (f = 1 GHz)

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2SC5118 [Transistors ]

other parts : 2SA1478  2SA1633  2SA1633E  2SA1788  2SA1788E  2SA1789  2SA1789E  2SA4653  2SAI633  2SB1477 

ETC
Unspecified

TO-220 class high output power package with Pc 60 to 100W.

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2SC5200 [Silicon NPN Power Transistors ]

other parts : C5200 

Savantic
SavantIC Semiconductor

DESCRIPTION
• With TO-3PL package
• Complement to type 2SA1943

APPLICATIONS
• High current switching
• Recommended for 100W high fidelity audio
   frequency amplifier output stage

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2SC5353 [HIGH VOLTAGE NPN TRANSISTOR ]

other parts : 2SC5353-T60-K  2SC5353-T6C-K  2SC5353-TA3-T  2SC5353-TF3-T  2SC5353L-T60-K  2SC5353L-T6C-K  2SC5353L-TA3-T  2SC5353L-TF3-T  C5353 

UTC
Unisonic Technologies

„DESCRIPTION
Switching Regulator and High Voltage Switching Applications
High-Speed DC-DC Converter Applications


FEATURES
* Excellent switching times: tR= 0.7μs(MAX), tF= 0.5μs(MAX)
* High collectors breakdown voltage: VCEO= 800V

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2SC5426 [2SC5426/ C5426 Original HITACHI TV Horizontal Output Transistor ]

other parts : C5426 

Hitachi
Hitachi -> Renesas Electronics

2SC5426 1500V 10A 50W Hitachi Transistor TO-3P

 

2SC5426, Reference datasheet : NTE2365 = BU2520DF

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2SC5538A [VHF to UHF Band OSC, High-Frequency Amplifier Applications ]

other parts : C5538A 

SANYO
SANYO -> Panasonic

NPN Epitaxial Planar Silicon Transistor

Features
• High gain : |S21e|2=10.5dB typ (f=1GHz).
• High cut-off frequency : fT=5.2GHz typ.
• Ultrasmall, slim flat-lead package (1.4mm✕0.8mm✕0.6mm).
• Halogen free compliance.

 

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2SC5639 [Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications ]

other parts : C5639 

SANYO
SANYO -> Panasonic

NPN Triple Diffused Planar Silicon Transistor

Features
· High speed (tf=100ns typ).
· High breakdown voltage (VCBO=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.

 

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2SC5200 [150 Watt Silicon NPN Power Transistors ]

other parts : 2SC5200O  2SC5200R 

THINKISEMI
Thinki Semiconductor Co., Ltd.

DESCRIPTION
·With TO-3PL package
·Complement to type 2SA1943

APPLICATIONS
·High current switching
·Recommended for 100W high fidelity audio frequency amplifier output stage

 

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2SC5353-T60-K [HIGH VOLTAGE NPN TRANSISTOR ]

other parts : 2SC5353  2SC5353-T6C-K  2SC5353-TA3-T  2SC5353-TF3-T  2SC5353L-T60-K  2SC5353L-T6C-K  2SC5353L-TA3-T  2SC5353L-TF3-T  C5353 

UTC
Unisonic Technologies

„DESCRIPTION
Switching Regulator and High Voltage Switching Applications
High-Speed DC-DC Converter Applications


FEATURES
* Excellent switching times: tR= 0.7μs(MAX), tF= 0.5μs(MAX)
* High collectors breakdown voltage: VCEO= 800V

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2SC5431 [NPN SILICON RF TRANSISTOR ]

other parts : 2SC5431-T1  2SC5433  2SC5433-T1  2SC5435  2SC5435-EB  2SC5435-FB  2SC5435-T1  2SC5435-T1-EB  2SC5435-T1-FB  2SC5436 

NEC
NEC => Renesas Technology

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES
• Contains same chip as 2SC5010
• Flat-lead 3-pin thin-type ultra super minimold package

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