2SC51

  

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2SC515 [Silicon NPN Power Transistors ] JMNIC
Quanzhou Jinmei Electronic

DESCRIPTION
·With TO-66 package
·High breakdown voltage 

APPLICATIONS
·For use in line-operated color TV chroma output circuits and sound output circuits

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2SC515 [Silicon NPN Power Transistors ] Iscsemi
Inchange Semiconductor

DESCRIPTION
• With TO-66 package
• High breakdown voltage

APPLICATIONS
• For use in line-operated color TV chroma output circuits and sound output circuits

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2SC515 [Silicon NPN Power T ransistors ] Savantic
SavantIC Semiconductor

DESCRIPTION                                    
·With TO-66 package
·High breakdown voltage

APPLICATIONS
·For use in line-operated color TV chroma output circuits and sound output circuits

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2SC5117 [Epitaxial Planar NPN Silicon Transistor ]

other parts : 2SA1634  2SA1635  2SA1757  2SA1758  2SB1085  2SB1085A  2SB1269 

ROHM
ROHM Semiconductor

Epitaxial Planar NPN Silicon Transistor

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

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2SC5161 [High Voltage Switching Transistor ]

other parts : C5161 

Twtysemi
TY Semiconductor

Features
● Low VCE(sat).
   VCE(sat) = 0.15V (Typ.),IC / IB = 1A / 0.2A
● High breakdown voltage.VCEO = 400V
● Fast switching.tr = 1.0ìs,IC = 0.8A
● NPN silicon transistor

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2SC5148 [Silicon NPN Power Transistor ]

other parts : C5148 

Iscsemi
Inchange Semiconductor

DESCRIPTION
·High Breakdown Voltage-
   : VCBO= 1500V (Min)
·High Switching Speed
·Low Saturation Voltage

APPLICATIONS
·Horizontal deflection output for high resolution display, color TV
·High speed switching applications

 

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2SC5161 [High voltage switching transistor (400V, 2A) ]

other parts : C5161  2SC5161TL  C5161TL  2SC5161TLB  C5161TLB 

ROHM
ROHM Semiconductor

Features
1) Low VCE(sat).
   VCE(sat)=0.15V (Typ.)
   (IC/IB=1A/0.2A)
2) High breakdown voltage.
   VCEO=400V
3) Fast switching.
   tf ≤1.0µs (IC=0.8A)

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2SC5112 [Epitaxial Planar NPN Silicon Transistor ]

other parts : 2SA1634  2SA1635  2SA1757  2SA1758  2SB1085  2SB1085A  2SB1269 

ROHM
ROHM Semiconductor

Epitaxial Planar NPN Silicon Transistor

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

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2SC5193 [MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD ]

other parts : 2SC5193-T1  2SC5193-T2  C5193  C5193-T1  C5193-T2 

NEC
NEC => Renesas Technology

FEATURES
• Low Voltage Operation, Low Phase Distortion
• Low Noise
   NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz
   NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• Large Absolute Maximum Collector Current
   IC = 100 mA
• Compact Mini Mold Package
   EIAJ: SC-70

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2SC5139 [Silicon NPN Epitaxial ]

other parts : C5139 

Hitachi
Hitachi -> Renesas Electronics

Application
VHF / UHF wide band amplifier

Features
• High gain bandwidth product
    fT= 11 GHz typ
• High gain, low noise figure
  PG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHz

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