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6679

  

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GE6679 [P-CHANNEL ENHANCEMENT MODE POWER MOSFET ] ETL
E-Tech Electronics LTD

Description
The GE6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters.

Features
* Simple Drive Requirement
* Lower On-resistance
* Fast Switching Characteristic

 

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AP6679GH [P-CHANNEL ENHANCEMENT MODE POWER MOSFET ]

other parts : 6679GH  6679GJ  AP6679GJ 

APEC
Advanced Power Electronics Corp

Description
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is
available for low-profile applications.

▼ Lower On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic

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AP6679GM-HF [P-CHANNEL ENHANCEMENT MODE POWER MOSFET ] APEC
Advanced Power Electronics Corp

Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

▼Simple Drive Requirement
▼Low On-resistance
▼Fast Switching Characteristic
▼RoHS Compliant

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FDS6679AZ [P-Channel PowerTrench® MOSFET ] Fairchild
Fairchild Semiconductor

General Description
This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features
■ Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
■ Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
■ Extended VGS range (-25V) for battery applications
■ HBM ESD protection level of 6kV typical (note 3)
■ High performance trench technology for extremely low rDS(on)
■ High power and current handing capability
■ RoHS Compliant

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AP6679GJ-HF [P-CHANNEL ENHANCEMENT MODE POWER MOSFET ]

other parts : 6679GH-HF  6679GJ-HF  AP6679GH-HF 

APEC
Advanced Power Electronics Corp

Description
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications.

▼Lower On-resistance
▼Simple Drive Requirement
▼Fast Switching Characteristic
▼RoHS Compliant

View
FDS6679AZ_2006 [P-Channel PowerTrench® MOSFET ] Fairchild
Fairchild Semiconductor

General Description
This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features
■ Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
■ Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
■ Extended VGS range (-25V) for battery applications
■ HBM ESD protection level of 6kV typical (note 3)
■ High performance trench technology for extremely low rDS(on)
■ High power and current handing capability
■ RoHS Compliant

View
AP6679GH-HF [P-CHANNEL ENHANCEMENT MODE POWER MOSFET ]

other parts : 6679GH-HF  6679GJ-HF  AP6679GJ-HF 

APEC
Advanced Power Electronics Corp

Description
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications.

▼Lower On-resistance
▼Simple Drive Requirement
▼Fast Switching Characteristic
▼RoHS Compliant

View
FDS6679AZ_2008 [P-Channel PowerTrench® MOSFET ] Fairchild
Fairchild Semiconductor

General Description
This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features
■ Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
■ Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
■ Extended VGS range (-25V) for battery applications
■ HBM ESD protection level of 6kV typical (note 3)
■ High performance trench technology for extremely low rDS(on)
■ High power and current handing capability
■ RoHS Compliant

View
AP6679GJ [P-CHANNEL ENHANCEMENT MODE POWER MOSFET ]

other parts : 6679GH  6679GJ  AP6679GH 

APEC
Advanced Power Electronics Corp

Description
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is
available for low-profile applications.

▼ Lower On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic

View
GE6679 [P-CHANNEL ENHANCEMENT MODE POWER MOSFET ] GTM
GTM CORPORATION

Description
The GE6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters.

Features
* Simple Drive Requirement
* Lower On-resistance
* Fast Switching Characteristic

 

View
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