BD80

  

Datasheet

Match, Like BD800 BD801 BD802 BD807 BD808 BD809
Start with BD800* BD801* BD802* BD807* BD808* BD809*
End *ABD80 *FBD80 *3BD80
Included *FBD80* *6BD80* *4BD80* *1BD80* *2BD80* *3BD80*

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BD809 [10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS ]

other parts : BD810 

Motorola
Motorola => Freescale

Plastic High Power Silicon Transistor

. . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

• DC Current Gain —
   hFE = 30 (Min) @ IC = 2.0 Adc

 

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BD809 [Silicon NPN Power Transistors ] Iscsemi
Inchange Semiconductor

DESCRIPTION
·With TO-220C package
·Complement to type BD810
·DC current gain
   : hFE = 30 (Min) @ IC = 2.0 Adc
  
APPLICATIONS
·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

 

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BD809 [Silicon NPN Power Transistors ] Savantic
SavantIC Semiconductor

DESCRIPTION
··With TO-220C package
·Complement to type BD810
·DC current gain
   : hFE = 30 (Min) @ IC = 2.0 Adc
  
APPLICATIONS
·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

 

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BD802 [Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors ]

other parts : BD795  BD796  BD797  BD798  BD799  BD800  BD801 

Intersil
Intersil
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BD801 [Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors ]

other parts : BD795  BD796  BD797  BD798  BD799  BD800  BD802 

Intersil
Intersil
View
BD800 [Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors ]

other parts : BD795  BD796  BD797  BD798  BD799  BD801  BD802 

Intersil
Intersil
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BD809 [10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS ]

other parts : BD809G  BD810  BD810G 

ON-Semiconductor
ON Semiconductor

Plastic High Power Silicon Transistor

These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

Features
• DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
• Pb-Free Packages are Available*

 

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BD807 [Silicon NPN Power Transistor ] Iscsemi
Inchange Semiconductor

DESCRIPTION
·DC Current Gain -: hFE = 30(Min.)@ IC= 2A
·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 60V(Min)
·Complement to Type BD808

APPLICATIONS
·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

View
BD800 [POWER TRANSISTORS PNP SILICON ] Iscsemi
Inchange Semiconductor

DESCRIPTION
·DC Current Gain -: hFE = 30(Min.)@ IC= 2A
·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 60V(Min)
·Complement to Type BD808

APPLICATIONS
·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

View
BD808 [Plastic high power silicon PNP transistor ]

other parts : BD801  BD802 

Motorola
Motorola => Freescale
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