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BD80

  

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Match, Like BD800 BD801 BD802 BD807 BD808 BD809
Start with BD800* BD801* BD802* BD807* BD808* BD809*
End *ABD80 *FBD80 *3BD80
Included *FBD80* *6BD80* *4BD80* *1BD80* *2BD80* *3BD80*

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Manufacturer Part no Description View
Savantic
SavantIC Semiconductor
BD809 Silicon NPN Power Transistors

DESCRIPTION
··With TO-220C package
·Complement to type BD810
·DC current gain
   : hFE = 30 (Min) @ IC = 2.0 Adc
  
APPLICATIONS
·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

 

Motorola
Motorola => Freescale
BD809 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS

Plastic High Power Silicon Transistor

. . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

• DC Current Gain —
   hFE = 30 (Min) @ IC = 2.0 Adc

 


other parts : BD810 
Iscsemi
Inchange Semiconductor
BD809 Silicon NPN Power Transistors

DESCRIPTION
·With TO-220C package
·Complement to type BD810
·DC current gain
   : hFE = 30 (Min) @ IC = 2.0 Adc
  
APPLICATIONS
·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

 

Intersil
Intersil
BD800 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors
other parts : BD795 BD796 BD797 BD798 BD799 BD801 BD802 
Intersil
Intersil
BD802 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors
other parts : BD795 BD796 BD797 BD798 BD799 BD800 BD801 
Intersil
Intersil
BD801 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors
other parts : BD795 BD796 BD797 BD798 BD799 BD800 BD802 
ON-Semiconductor
ON Semiconductor
BD809 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

Plastic High Power Silicon Transistor

These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

Features
• DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
• Pb-Free Packages are Available*

 


other parts : BD809G BD810 BD810G 
Iscsemi
Inchange Semiconductor
BD807 Silicon NPN Power Transistor

DESCRIPTION
·DC Current Gain -: hFE = 30(Min.)@ IC= 2A
·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 60V(Min)
·Complement to Type BD808

APPLICATIONS
·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

Iscsemi
Inchange Semiconductor
BD800 POWER TRANSISTORS PNP SILICON

DESCRIPTION
·DC Current Gain -: hFE = 30(Min.)@ IC= 2A
·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 60V(Min)
·Complement to Type BD808

APPLICATIONS
·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

Motorola
Motorola => Freescale
BD808 Plastic high power silicon PNP transistor
other parts : BD801 BD802 

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