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Manufacturer Part no Description View
NJSEMI
NJSEMINJSEMI
BLW32 UHF linear power transistor

DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers.
The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent

ASI
ASIASI
BLW76 NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:
The ASI BLW76 is Designed for use in class-AB or class-B operated high power transmitters in the H.F. and V.H.F bands and, as a Linear amplifier in the H.F. band.

FEATURES:
• PG = 18 dB min. at 75 W/30 MHz
• IMD3 = -30 dBc max. at 75 W (PEP)
• Omnigold™ Metalization System

 

NJSEMI
NJSEMINJSEMI
BLW34 UHF linear power transistor

DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent

Philips
PhilipsPhilips
BLW34 UHF linear power transistor

DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent

Philips
PhilipsPhilips
BLW98 UHF linear power transistor

DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers of TV
transposers and transmitters in band IV-V, as well as for driver stages in tube systems.

Philips
PhilipsPhilips
BLW86 HF/VHF power transistor

N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f.
transmitters with a nominal supply voltage of 28 V.

The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hFEgroups are available on request.

 

It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the

ASI
ASIASI
BLW85 NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:
The ASI BLW85is Designed for Class C Amplifier Applications in VHF Mobile Radios.

FEATURES:
• PG= 9.5 dB Typ. at 40 W /175 MHz
• ηC= 60% Typ. at 40 W /175 MHz
• Omnigold™ Metalization System

Philips
PhilipsPhilips
BLW60 VHF power transistor

DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.

Matched hFE groups are available on request.
It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud.


other parts : BLW60C 
ASI
ASIASI
BLW32 NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:
The ASI BLW32 is Designed for Television Band IV & V Applications up to 860 MHz.

FEATURES:
• Common Emitter
• PG = 11 dB at 0.5 W/ 860 MHz
• Omnigold™ Metalization System

 


other parts : ASI10677 
Philips
PhilipsPhilips
BLW96 HF/VHF power transistor

DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f. and

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