Integrated circuits, Transistor, Semiconductors Free Datasheet Search and Download Site


BLW

  

Datasheet

Match, Like N/A
Start with BLW2* BLW3* BLW5* BLW6* BLW7* BLW8* BLW9*
End *GBLW *NBLW *SBLW *YBLW *HBLW *CBLW *8BLW
Included *BLW-* *BLW1* *BLWE* *BLWH*
View Details    
BLW29 [VHF power transistor ] Philips
Philips Electronics

DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power handling capability, the transistor is especially suited for design of wide-band and semi-wide-band v.h.f. amplifiers. Together with a BFQ42 driver stage, the chain can deliver 15 W with a maximum drive power of 120 mW at 175 MHz. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.
It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud.

View
BLW30 [VHF power transistor ] Philips
Philips Electronics

DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a 4-lead 3⁄8 inch SOT120 capstan envelope with a ceramic cap. It is designed for common emitter, class-B operation mobile VHF transmitters with a supply voltage of 12.5 V. All leads are isolated from the stud.

FEATURES
• Emitter-ballasting resistors for an optimum temperature profile
• Excellent reliability
• Withstands full load mismatch.

View
BLW31 [NPN SILICON RF POWER TRANSISTOR ] ASI
Advanced Semiconductor

DESCRIPTION:
The ASI BLW31is an NPN silicon power transistor, designed 175 MHz applications, especially suited for design of wide-band and semi-wide-band VHF amplifiers.

FEATURES:
• Common Emitter-Class-A, B or C
• PG= 9 dB at 28 W/175 MHz
• Omnigold™ Metalization System

View
BLW32 [UHF linear power transistor ] Philips
Philips Electronics

DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers.
The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties.
The transistor has a 1⁄4" capstan envelope with ceramic cap.

 

View
BLW32 [NPN SILICON RF POWER TRANSISTOR ]

other parts : ASI10677 

ASI
Advanced Semiconductor

DESCRIPTION:
The ASI BLW32 is Designed for Television Band IV & V Applications up to 860 MHz.

FEATURES:
• Common Emitter
• PG = 11 dB at 0.5 W/ 860 MHz
• Omnigold™ Metalization System

 

View
BLW32 [UHF linear power transistor ] NJSEMI
New Jersey Semiconductor

DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers.
The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties.
The transistor has a 1⁄4" capstan envelope with ceramic cap.

 

View
BLW34 [UHF linear power transistor ] Philips
Philips Electronics

DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties.
The transistor has a 1⁄4" capstan envelope with ceramic cap.

 

View
BLW34 [NPN SILICON RF POWER TRANSISTOR ] ASI
Advanced Semiconductor

DESCRIPTION:
The ASI BLW34 is Designed for use in UHF amplifiers up to 860 MHz.

FEATURES:
• PG = 10.2 dB Typical at 860 MHz
• Omnigold™ Metallization System

 

View
BLW34 [UHF linear power transistor ] NJSEMI
New Jersey Semiconductor

DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties.
The transistor has a 1⁄4" capstan envelope with ceramic cap.

View
BLW60 [VHF power transistor ]

other parts : BLW60C 

Philips
Philips Electronics

DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.

Matched hFE groups are available on request.
It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud.

View
1 2 3 4 5
Share Link : 

HOME




Language : 한국어     日本語     русский     简体中文     español
@ 2015 - 2018  [ Home ][ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]