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BLW32 [UHF linear power transistor ] NJSEMI
New Jersey Semiconductor

DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers.
The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties.
The transistor has a 1⁄4" capstan envelope with ceramic cap.

 

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BLW76 [NPN SILICON RF POWER TRANSISTOR ] ASI
Advanced Semiconductor

DESCRIPTION:
The ASI BLW76 is Designed for use in class-AB or class-B operated high power transmitters in the H.F. and V.H.F bands and, as a Linear amplifier in the H.F. band.

FEATURES:
• PG = 18 dB min. at 75 W/30 MHz
• IMD3 = -30 dBc max. at 75 W (PEP)
• Omnigold™ Metalization System

 

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BLW34 [UHF linear power transistor ] NJSEMI
New Jersey Semiconductor

DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties.
The transistor has a 1⁄4" capstan envelope with ceramic cap.

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BLW98 [NPN SILICON RF POWER TRANSISTOR ]

other parts : ASI10762 

ASI
Advanced Semiconductor

DESCRIPTION:
The ASI BLW98is Designed for use in UHF amplifier applications up to 860 MHz.

FEATURES:
• PG= 16.5 dB Typical at 860 MHz
• Common Emitter
• Omnigold™ Metallization System

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BLW34 [NPN SILICON RF POWER TRANSISTOR ] ASI
Advanced Semiconductor

DESCRIPTION:
The ASI BLW34 is Designed for use in UHF amplifiers up to 860 MHz.

FEATURES:
• PG = 10.2 dB Typical at 860 MHz
• Omnigold™ Metallization System

 

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BLW29 [VHF power transistor ] Philips
Philips Electronics

DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power handling capability, the transistor is especially suited for design of wide-band and semi-wide-band v.h.f. amplifiers. Together with a BFQ42 driver stage, the chain can deliver 15 W with a maximum drive power of 120 mW at 175 MHz. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.
It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud.

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BLW86 [NPN SILICON RF POWER TRANSISTOR ] ASI
Advanced Semiconductor

The ASI BLW86is Designed for Class C, 28 V High Band Applications up to 175 MHz.

 

FEATURES:
• Common Emitter
• PG= 7.0 dB at 40 W/175 MHz
• Omnigold™ Metalization System

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BLW96 [NPN SILICON RF POWER TRANSISTOR ]

other parts : ASI10826 

ASI
Advanced Semiconductor

DESCRIPTION:
The ASI BLW96 is Designed for High Linearity Class A, AB HF Power Amplifier Applications up to 30 MHz.

FEATURES:
PG = 14 dB Typical at 200 W/28 MHz
IMD3 = -32 dBc Typ. at 220 W(PEP)
Omnigold™ Metalization System

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BLW85 [HF/VHF power transistor ] Philips
Philips Electronics

DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized andis guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.
Matched hFEgroups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.

 

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BLW32 [UHF linear power transistor ] Philips
Philips Electronics

DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers.
The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties.
The transistor has a 1⁄4" capstan envelope with ceramic cap.

 

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