C3603

  

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2SC3603 [NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION ] NEC
NEC => Renesas Technology

The 2SC3603 is an NPN epitaxial transistor designed for low noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

FEATURES
• Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz
• High power gain : GA = 10 dB TYP. @ f = 2.0 GHz

 

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C3603 [MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR ]

other parts : 2SC3587  C3583-T1B  C3583-T2B  C3585-T1B  C3585-T2B  C3587  C4094 

NEC
NEC => Renesas Technology

The 2SC3603 is an NPN epitaxial transistor designed for low noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

FEATURES
• Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz
• High power gain : GA = 10 dB TYP. @ f = 2.0 GHz

 

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