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Etron
Etron Technology
EM636165 1Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a


other parts : EM636165BE EM636165BE-10G EM636165BE-55G EM636165BE-5G EM636165BE-6G EM636165BE-7G EM636165BE-7LG EM636165BE-8G EM636165TS EM636165TS-10 
Etron
Etron Technology
EM636165TS 1Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a


other parts : EM636165 EM636165BE EM636165BE-10G EM636165BE-55G EM636165BE-5G EM636165BE-6G EM636165BE-7G EM636165BE-7LG EM636165BE-8G EM636165TS-10 
Etron
Etron Technology
EM636165BE 1Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a


other parts : EM636165 EM636165BE-10G EM636165BE-55G EM636165BE-5G EM636165BE-6G EM636165BE-7G EM636165BE-7LG EM636165BE-8G EM636165TS EM636165TS-10 
Etron
Etron Technology
EM636165VE-7 1Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a


other parts : EM636165 EM636165BE EM636165BE-10G EM636165BE-55G EM636165BE-5G EM636165BE-6G EM636165BE-7G EM636165BE-7LG EM636165BE-8G EM636165TS 
Etron
Etron Technology
EM636165TS-6 1Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a


other parts : EM636165 EM636165BE EM636165BE-10G EM636165BE-55G EM636165BE-5G EM636165BE-6G EM636165BE-7G EM636165BE-7LG EM636165BE-8G EM636165TS 
Etron
Etron Technology
EM636165-XXI 1Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a


other parts : EM636165TS-10I EM636165TS-10IG EM636165TS-6I EM636165TS-6IG EM636165TS-7I EM636165TS-7IG EM636165TS-8I EM636165TS-8IG 
Etron
Etron Technology
EM636165TS-5 1Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a


other parts : EM636165 EM636165BE EM636165BE-10G EM636165BE-55G EM636165BE-5G EM636165BE-6G EM636165BE-7G EM636165BE-7LG EM636165BE-8G EM636165TS 
Etron
Etron Technology
EM636165TS-8 1Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a


other parts : EM636165 EM636165BE EM636165BE-10G EM636165BE-55G EM636165BE-5G EM636165BE-6G EM636165BE-7G EM636165BE-7LG EM636165BE-8G EM636165TS 
Etron
Etron Technology
EM636165VE-6 1Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a


other parts : EM636165 EM636165BE EM636165BE-10G EM636165BE-55G EM636165BE-5G EM636165BE-6G EM636165BE-7G EM636165BE-7LG EM636165BE-8G EM636165TS 
Etron
Etron Technology
EM636165VE-5 1Mega x 16 Synchronous DRAM (SDRAM)

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a


other parts : EM636165 EM636165BE EM636165BE-10G EM636165BE-55G EM636165BE-5G EM636165BE-6G EM636165BE-7G EM636165BE-7LG EM636165BE-8G EM636165TS 

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