EM636165TS-7

  

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Match, Like EM636165TS-7 EM636165TS-7G EM636165TS-7I EM636165TS-7L
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EM636165TS-7 [1Mega x 16 Synchronous DRAM (SDRAM) ]

other parts : EM636165  EM636165BE  EM636165BE-10G  EM636165BE-55G  EM636165BE-5G  EM636165BE-6G  EM636165BE-7G 

Etron
Etron Technology

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a

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EM636165TS-7G [1Mega x 16 Synchronous DRAM (SDRAM) ]

other parts : EM636165  EM636165BE  EM636165BE-10G  EM636165BE-55G  EM636165BE-5G  EM636165BE-6G  EM636165BE-7G 

Etron
Etron Technology

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a

View
EM636165TS-7L [1Mega x 16 Synchronous DRAM (SDRAM) ]

other parts : EM636165  EM636165BE  EM636165BE-10G  EM636165BE-55G  EM636165BE-5G  EM636165BE-6G  EM636165BE-7G 

Etron
Etron Technology

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a

View
EM636165TS-7I [1Mega x 16 Synchronous DRAM (SDRAM) ]

other parts : EM636165-XXI  EM636165TS-10I  EM636165TS-10IG  EM636165TS-6I  EM636165TS-6IG  EM636165TS-7IG  EM636165TS-8I 

Etron
Etron Technology

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a

View
EM636165TS-7LG [1Mega x 16 Synchronous DRAM (SDRAM) ]

other parts : EM636165  EM636165BE  EM636165BE-10G  EM636165BE-55G  EM636165BE-5G  EM636165BE-6G  EM636165BE-7G 

Etron
Etron Technology

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a

View
EM636165TS-7IG [1Mega x 16 Synchronous DRAM (SDRAM) ]

other parts : EM636165-XXI  EM636165TS-10I  EM636165TS-10IG  EM636165TS-6I  EM636165TS-6IG  EM636165TS-7I  EM636165TS-8I 

Etron
Etron Technology

Overview
The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a

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