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Manufacturer Part no Description View
KERSEMI
Kersemi Electronic Co., Ltd.
IRFR210TRLPBF Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210 IRFR210PBF IRFR210TR IRFR210TRL IRFR210TRPBF IRFR210TRR IRFU210 IRFU210PBF SIHFR210 SIHFR210-E3 
Vishay
Vishay Semiconductors
IRFR210 Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210PBF IRFR210TR IRFR210TRL IRFR210TRLPBF IRFR210TRPBF IRFR210TRR IRFU210 IRFU210PBF SIHFR210 SIHFR210-E3 
GoodArk
GOOD-ARK1
40HFR20 POWER RECTIFIER Reverse Voltage - 100 to 1600 Volts Forward Current - 40.0 Amperes

Features
High surge current capability
Designed for a wide range of applications
Stud cathode and stud anode version
Leaded version available
Types up to 1600V VRRM

Typical Applications
Battery charges
Converters
Power supplies
Machine tool controls


other parts : 40HF20M 40HFR20M 
KERSEMI
Kersemi Electronic Co., Ltd.
SIHFR210-E3 Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210 IRFR210PBF IRFR210TR IRFR210TRL IRFR210TRLPBF IRFR210TRPBF IRFR210TRR IRFU210 IRFU210PBF SIHFR210 
Fairchild
Fairchild Semiconductor
FSFR2100XS Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converters

Description
The FSFR-XS series includes highly integrated power switches designed for high-efficiency half-bridge resonant converters. Offering everything necessary to build a reliable and robust resonant converter, the FSFRXS series simplifies designs while improving productivity and performance. The FSFR-XS series combines power MOSFETs with fast-recovery type body diodes, a highside gate-drive circuit, an accurate current controlled oscillator, frequency limit circuit, soft-start,


other parts : FSFR1600XS FSFR1600XSL FSFR1700XS FSFR1700XSL FSFR1800XS FSFR1800XSL FSFR2100XSL 
NJSEMI
New Jersey Semiconductor
40HFR20M STANDARD RECOVERY DIODES

Features
■ High surge current capability
■ Stud cathode and stud anode version
■ Leaded version available
■ Types up to 1600V VRRM

Typical Applications
■ Battery charges
■ Converters
■ Power supplies
■ Machine tool controls
■ Welding

 


other parts : 40HF10 40HF 40HFR 40HF100 40HF100M 40HF10M 40HF120 40HF120M 40HF140 40HF140M 
Vishay
Vishay Semiconductors
6FR20MS02 Fast Recovery Diodes (Stud Version), 6/12/16 A

FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• RoHS compliant

TYPICAL APPLICATIONS
• DC power supplies
• Inverters
• Converters
• Choppers
• Ultrasonic


other parts : 12F100MS02 12F100MS05 12F100S02 12F100S05 12F10MS02 12F10MS05 12F10S02 12F10S05 12F20MS02 12F20MS05 
Vishay
Vishay Semiconductors
16FR20S02 Fast Recovery Diodes (Stud Version), 6/12/16 A

FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• RoHS compliant

TYPICAL APPLICATIONS
• DC power supplies
• Inverters
• Converters
• Choppers
• Ultrasonic


other parts : 12F100MS02 12F100MS05 12F100S02 12F100S05 12F10MS02 12F10MS05 12F10S02 12F10S05 12F20MS02 12F20MS05 
KERSEMI
Kersemi Electronic Co., Ltd.
SIHFR210T-E3 Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210 IRFR210PBF IRFR210TR IRFR210TRL IRFR210TRLPBF IRFR210TRPBF IRFR210TRR IRFU210 IRFU210PBF SIHFR210 
Vishay
Vishay Semiconductors
IRFR210TR Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210 IRFR210PBF IRFR210TRL IRFR210TRLPBF IRFR210TRPBF IRFR210TRR IRFU210 IRFU210PBF SIHFR210 SIHFR210-E3 

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