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Manufacturer Part no Description View
Fairchild
Fairchild Semiconductor
MOC8100FR2M General Purpose 6-Pin Phototransistor Optocouplers

General Description
The MOC8100M, TIL111M and TIL117M optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.


other parts : MOC8100FM MOC8100FR2VM MOC8100FVM MOC8100M MOC8100SM MOC8100SR2M MOC8100SR2VM MOC8100SVM MOC8100TM MOC8100TVM 
KERSEMI
Kersemi Electronic Co., Ltd.
IRFR210PBF Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210 IRFR210TR IRFR210TRL IRFR210TRLPBF IRFR210TRPBF IRFR210TRR IRFU210 IRFU210PBF SIHFR210 SIHFR210-E3 
Vishay
Vishay Semiconductors
12FR20MS05 Fast Recovery Diodes (Stud Version), 6/12/16 A

FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• RoHS compliant

TYPICAL APPLICATIONS
• DC power supplies
• Inverters
• Converters
• Choppers
• Ultrasonic


other parts : 12F100MS02 12F100MS05 12F100S02 12F100S05 12F10MS02 12F10MS05 12F10S02 12F10S05 12F20MS02 12F20MS05 
IR
International Rectifier
AUIRFR2607Z HEXFET® Power MOSFET

V(BR)DSS 75V
RDS(on) typ. 17.6mΩ
                   max. 22mΩ
ID (Silicon Limited) 45A
ID (Package Limited) 42A

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional

Vishay
Vishay Semiconductors
6FR20S02 Fast Recovery Diodes (Stud Version), 6/12/16 A

FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• RoHS compliant

TYPICAL APPLICATIONS
• DC power supplies
• Inverters
• Converters
• Choppers
• Ultrasonic


other parts : 12F100MS02 12F100MS05 12F100S02 12F100S05 12F10MS02 12F10MS05 12F10S02 12F10S05 12F20MS02 12F20MS05 
Vishay
Vishay Semiconductors
SIHFR210TL Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210 IRFR210PBF IRFR210TR IRFR210TRL IRFR210TRLPBF IRFR210TRPBF IRFR210TRR IRFU210 IRFU210PBF SIHFR210 
GoodArk
GOOD-ARK1
40HFR20M POWER RECTIFIER Reverse Voltage - 100 to 1600 Volts Forward Current - 40.0 Amperes

Features
High surge current capability
Designed for a wide range of applications
Stud cathode and stud anode version
Leaded version available
Types up to 1600V VRRM

Typical Applications
Battery charges
Converters
Power supplies
Machine tool controls


other parts : 40HF20M 40HFR20 
Fairchild
Fairchild Semiconductor
IRFR220B 200V N-Channel MOSFET

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for


other parts : IRFU220B 
Vishay
Vishay Semiconductors
SIHFR210TR Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210 IRFR210PBF IRFR210TR IRFR210TRL IRFR210TRLPBF IRFR210TRPBF IRFR210TRR IRFU210 IRFU210PBF SIHFR210 
Vishay
Vishay Semiconductors
IRFR210TRLPBF Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210 IRFR210PBF IRFR210TR IRFR210TRL IRFR210TRPBF IRFR210TRR IRFU210 IRFU210PBF SIHFR210 SIHFR210-E3 

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