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Included *5FR2* *UFR2* *HFR2* *LFR2* *WFR2* *3FR2* *SFR2* *2FR2* *6FR2* *TFR2* *RFR2* *4FR2* *PFR2* *-FR2* *QFR2* *XFR2* *BFR2* *1FR2* *7FR2* *YFR2* *0FR2*

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Manufacturer Part no Description View
Panasonic
PanasonicPanasonic
ELJRFR22GFB Fixed Inductors (Chip Inductors)

High Frequency Use (Non Magnetic Core) RF, RE, ND, NC, NA

■ Features
● High frequency capability due to its non magnetic core.
● Capable of being Re-fl ow or fl ow soldered.
● Wide line-up from 1005 to 3225 case sizes.
● Good for mounting.
● RoHS compliant

■ Recommended Applications
● RF circuitry for cellular phones and wireless communication equipment.

 


other parts : ELJNA10NDF ELJNA10NDFA ELJNA10NDFB ELJNA10NGF ELJNA10NGFA ELJNA10NGFB ELJNA10NJF ELJNA10NJFA ELJNA10NJFB ELJNA10NKF 
IR
IRIR
72HFR20 STANDARD RECOVERY DIODES(Stud Version), 70 A

STANDARD RECOVERY DIODES

Features
High surge current capability
Designed for a wide range of applications
Stud cathode and stud anode version
Leaded version available
Types up to 1600V VRRM

Typical Applications
Battery charges
Converters
Power supplies
Machine tool controls
 


other parts : 70HF 70HF10 70HF100 70HF100M 70HF10M 70HF120 70HF120M 70HF140 70HF140M 70HF160 
Vishay
VishayVishay
SIHFR220-E3 Power MOSFET

Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vaporphase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surcace


other parts : IRFR220 IRFR220PBF IRFR220TR IRFR220TRL IRFR220TRLPBF IRFR220TRPBF IRFR220TRR IRFR220TRRPBF IRFU220 IRFU220PBF 
Vishay
VishayVishay
16FR20S05 Fast Recovery Diodes (Stud Version), 6/12/16 A

FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• RoHS compliant

TYPICAL APPLICATIONS
• DC power supplies
• Inverters
• Converters
• Choppers
• Ultrasonic


other parts : 12F100MS02 12F100MS05 12F100S02 12F100S05 12F10MS02 12F10MS05 12F10S02 12F10S05 12F20MS02 12F20MS05 
ETC
ETCETC
IRFR220TRPBF Power MOSFET

[KERSEMI]

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vaporphase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surcace


other parts : IRFR220 IRFR220PBF IRFR220TR IRFR220TRL IRFR220TRLPBF IRFR220TRR IRFR220TRRPBF IRFU220 IRFU220PBF SIHFR220 
Vishay
VishayVishay
SIHFR210TL-E3 Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210 IRFR210PBF IRFR210TR IRFR210TRL IRFR210TRLPBF IRFR210TRPBF IRFR210TRR IRFU210 IRFU210PBF SIHFR210 
IXYS
IXYSIXYS
IXFR24N50Q HiPerFET™ Power MOSFETs ISOPLUS247™

(Electrically Isolated Back Surface)
N-Channel Enhancement Mode High dV/dt, Low trr, HDMOS™ Family

Features
Silicon chip on Direct-Copper-Bond substrate
-  High  power  dissipation
-  Isolated  mounting  surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low RDS (on)HDMOS™ process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching


other parts : 24N50Q 26N50Q IXFR26N50Q 
GoodArk
GoodArkGoodArk
40HFR20M POWER RECTIFIER Reverse Voltage - 100 to 1600 Volts Forward Current - 40.0 Amperes

Features
High surge current capability
Designed for a wide range of applications
Stud cathode and stud anode version
Leaded version available
Types up to 1600V VRRM

Typical Applications
Battery charges
Converters
Power supplies
Machine tool controls


other parts : 40HF20M 40HFR20 
Panasonic
PanasonicPanasonic
AQY221FR2VY PhotoMOS Relays RF SSOP C×R10 Voltage-sensitive

Space-saving SSOP 1 Form A type with built-in registor 40V load voltage

FEATURES
1. Built-in input resistor means less man-hours when mounting
The voltage-sensitive type, which eliminates the need to mount an external input resistor, is now available in a small package. Man-hours spent mounting external input resistors are cut and board
designing is simplified.
2. Save space on PC board
Since the small package size remains the same while including


other parts : AQY221FN2V AQY221FN2VW AQY221FN2VY AQY221FR2V AQY221FR2VW AQY221F?2V 
KERSEMI
KERSEMIKERSEMI
SIHFR210TR Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210 IRFR210PBF IRFR210TR IRFR210TRL IRFR210TRLPBF IRFR210TRPBF IRFR210TRR IRFU210 IRFU210PBF SIHFR210 

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