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FR2

  

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Start with FR20* FR22* FR25* FR2A* FR2B* FR2D* FR2G* FR2J* FR2K* FR2M* FR2S*
End *AFR2 *BFR2 *1FR2 *3FR2 *0FR2 *6FR2 *5FR2 *2FR2 *EFR2
Included *HFR2* *WFR2* *LFR2* *5FR2* *UFR2* *3FR2* *SFR2* *2FR2* *6FR2* *TFR2* *RFR2* *4FR2* *PFR2* *-FR2* *QFR2* *XFR2* *BFR2* *1FR2* *7FR2* *YFR2* *0FR2*

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Manufacturer Part no Description View
KERSEMI
KERSEMIKERSEMI
SIHFR210-E3 Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210 IRFR210PBF IRFR210TR IRFR210TRL IRFR210TRLPBF IRFR210TRPBF IRFR210TRR IRFU210 IRFU210PBF SIHFR210 
NJSEMI
NJSEMINJSEMI
40HFR20M STANDARD RECOVERY DIODES

Features
■ High surge current capability
■ Stud cathode and stud anode version
■ Leaded version available
■ Types up to 1600V VRRM

Typical Applications
■ Battery charges
■ Converters
■ Power supplies
■ Machine tool controls
■ Welding

 


other parts : 40HF10 40HF 40HFR 40HF100 40HF100M 40HF10M 40HF120 40HF120M 40HF140 40HF140M 
Fairchild
FairchildFairchild
FSFR2100XS Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converters

Description
The FSFR-XS series includes highly integrated power switches designed for high-efficiency half-bridge resonant converters. Offering everything necessary to build a reliable and robust resonant converter, the FSFRXS series simplifies designs while improving productivity and performance. The FSFR-XS series combines power MOSFETs with fast-recovery type body diodes, a highside gate-drive circuit, an accurate current controlled oscillator, frequency limit circuit, soft-start,


other parts : FSFR1600XS FSFR1600XSL FSFR1700XS FSFR1700XSL FSFR1800XS FSFR1800XSL FSFR2100XSL 
Fairchild
FairchildFairchild
MOC8100FR2M General Purpose 6-Pin Phototransistor Optocouplers

General Description
The MOC8100M, TIL111M and TIL117M optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.


other parts : MOC8100FM MOC8100FR2VM MOC8100FVM MOC8100M MOC8100SM MOC8100SR2M MOC8100SR2VM MOC8100SVM MOC8100TM MOC8100TVM 
Vishay
VishayVishay
6FR20MS02 Fast Recovery Diodes (Stud Version), 6/12/16 A

FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• RoHS compliant

TYPICAL APPLICATIONS
• DC power supplies
• Inverters
• Converters
• Choppers
• Ultrasonic


other parts : 12F100MS02 12F100MS05 12F100S02 12F100S05 12F10MS02 12F10MS05 12F10S02 12F10S05 12F20MS02 12F20MS05 
KERSEMI
KERSEMIKERSEMI
SIHFR210T-E3 Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210 IRFR210PBF IRFR210TR IRFR210TRL IRFR210TRLPBF IRFR210TRPBF IRFR210TRR IRFU210 IRFU210PBF SIHFR210 
IR
IRIR
AUIRFR2607Z HEXFET® Power MOSFET

V(BR)DSS 75V
RDS(on) typ. 17.6mΩ
                   max. 22mΩ
ID (Silicon Limited) 45A
ID (Package Limited) 42A

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional

Vishay
VishayVishay
16FR20S02 Fast Recovery Diodes (Stud Version), 6/12/16 A

FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• RoHS compliant

TYPICAL APPLICATIONS
• DC power supplies
• Inverters
• Converters
• Choppers
• Ultrasonic


other parts : 12F100MS02 12F100MS05 12F100S02 12F100S05 12F10MS02 12F10MS05 12F10S02 12F10S05 12F20MS02 12F20MS05 
Vishay
VishayVishay
IRFR210TR Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210 IRFR210PBF IRFR210TRL IRFR210TRLPBF IRFR210TRPBF IRFR210TRR IRFU210 IRFU210PBF SIHFR210 SIHFR210-E3 
KERSEMI
KERSEMIKERSEMI
IRFR210TRL Power MOSFET

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.


other parts : IRFR210 IRFR210PBF IRFR210TR IRFR210TRLPBF IRFR210TRPBF IRFR210TRR IRFU210 IRFU210PBF SIHFR210 SIHFR210-E3 

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