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GE630 [N-CHANNEL ENHANCEMENT MODE POWER MOSFET ] GTM
GTM CORPORATION
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GE6679 [P-CHANNEL ENHANCEMENT MODE POWER MOSFET ] ETL
E-Tech Electronics LTD

Description
The GE6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters.

Features
* Simple Drive Requirement
* Lower On-resistance
* Fast Switching Characteristic

 

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GE6679 [P-CHANNEL ENHANCEMENT MODE POWER MOSFET ] GTM
GTM CORPORATION

Description
The GE6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters.

Features
* Simple Drive Requirement
* Lower On-resistance
* Fast Switching Characteristic

 

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GE60N03 [N-CHANNEL ENHANCEMENT MODE POWER MOSFET ] GTM
GTM CORPORATION

Description
The GE60N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications and suited for low voltage application such as DC/DC converters and high efficiency switching circuit.

Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching

 

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GE60T03 [N-CHANNEL ENHANCEMENT MODE POWER MOSFET ] GTM
GTM CORPORATION
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GE60L02 [N-CHANNEL ENHANCEMENT MODE POWER MOSFET ] GTM
GTM CORPORATION
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