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HFD37-12IO1

  

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SIHFD024_2008 [Power MOSFET ]

other parts : IRFD024PBF_2008  SIHFD024-E3_2008  IRFD024_2008 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

View
SIHFD110 [Power MOSFET ]

other parts : IRFD110  IRFD110PBF  SIHFD110-E3 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching and Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC

View
SIHFD9014_2008 [Power MOSFET ]

other parts : IRFD9014PBF_2008  SIHFD9014-E3_2008  IRFD9014_2008 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Lead (Pb)-free Available

View
SIHFD014-E3_2008 [Power MOSFET ]

other parts : IRFD014PBF_2008  IRFD014_2008  SIHFD014_2008 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

View
SIHFD024-E3 [Power MOSFET ]

other parts : IRFD024PBF  IRFD024  SIHFD024 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

View
SIHFD120 [Power MOSFET ]

other parts : IRFD120PBF  SIHFD120-E3  IRFD120 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available

 

View
SIHFD9014-E3 [Power MOSFET ]

other parts : IRFD9014PBF  IRFD9014  SIHFD9014 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC

View
SIHFD014_2008 [Power MOSFET ]

other parts : IRFD014PBF_2008  SIHFD014-E3_2008  IRFD014_2008 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

View
SIHFD024 [Power MOSFET ]

other parts : IRFD024PBF  SIHFD024-E3  IRFD024 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

View
SIHFD110-E3_2008 [Power MOSFET ]

other parts : IRFD110PBF_2008  IRFD110_2008  SIHFD110_2008 

Vishay
Vishay Semiconductors

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching and Ease of Paralleling
• Lead (Pb)-free Available

View
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