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CAT28F001HI-12BT [1 Megabit CMOS Boot Block Flash Memory ]

other parts : CAT28F001  CAT28F001G-12BT  CAT28F001G-12TT  CAT28F001G-90BT  CAT28F001G-90TT  CAT28F001GA-12BT  CAT28F001GA-12TT 

ON-Semiconductor
ON Semiconductor

DESCRIPTION
The CAT28F001 is a high speed 128K X 8 bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after sale code updates. The CAT28F001 has a blocked architecture with one 8 KB Boot Block, two 4 KB Parameter Blocks and one 112 KB Main Block. The Boot Block section can be at the top or bottom of the memory map and includes a reprogramming write lock out feature to guarantee data integrity. It is designed to contain secure code which will bring up the system minimally and download code to other loca
tions of CAT28F001.

FEATURES
■Fast Read Access Time: 90/120 ns
■On-Chip Address and Data Latches
■Blocked Architecture
— One 8 KB Boot Block w/ Lock Out
• Top or Bottom Locations
— Two 4 KB Parameter Blocks
— One 112 KB Main Block
■Low Power CMOS Operation
■12.0V ±5% Programming and Erase Voltage
■Automated Program & Erase Algorithms
■High Speed Programming
■Commercial, Industrial and Automotive Temperature Ranges

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MX29LV800CBXHI-45 [8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY ]

other parts : MX29LV800CBMC-45  MX29LV800CBMC-45R  MX29LV800CBMC-55  MX29LV800CBMC-55R  MX29LV800CBMC-70  MX29LV800CBMC-70R  MX29LV800CBMC-90 

MCNIX
Macronix International

GENERAL DESCRIPTION
The MX29LV800C T/B is a 8-mega bit Flash memory organized as 1M bytes of 8 bits or 512K words of 16 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29LV800C T/B is packaged in 44-pin SOP, 48-pin TSOP, and 48-ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers.

FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 1,048,576 x 8/524,288 x 16 switchable
• Single power supply operation
   - 3.0V only operation for read, erase and program operation
• Fast access time: 45R/55R/70/90ns
• Low power consumption
   - 30mA maximum active current
   - 0.2uA typical standby current
• Command register architecture
   - Byte/word Programming (9us/11us typical)
   - Sector Erase (Sector structure 16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)
• Fully compatible with MX29LV800BT/BB device
• Auto Erase (chip & sector) and Auto Program
   - Automatically erase any combination of sectors with Erase Suspend capability
   - Automatically program and verify data at specified address
• Erase suspend/Erase Resume
   - Suspends sector erase operation to read data from, or program data to, any sector that is not being erased, then resumes the erase
• Status Reply
   - Data# polling & Toggle bit for detection of program and erase operation completion
• Ready/Busy# pin (RY/BY#)
   - Provides a hardware method of detecting program or erase operation completion
• Sector protection
   - Hardware method to disable any combination of sectors from program or erase operations
   - Temporary sector unprotected allows code changes in previously locked sectors.
• CFI (Common Flash Interface) compliant
   - Flash device parameters stored on the device and provide the host system to access
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
   - T = Top Boot Sector
   - B = Bottom Boot Sector
• Package type:
   - 44-pin SOP
   - 48-pin TSOP
   - 48-ball CSP (6 x 8mm)
   - 48-ball CSP (4 x 6mm)
   - All Pb-free devices are RoHS Compliant
• Compatibility with JEDEC standard
   - Pinout and software compatible with single-power supply Flash
• 10 years data retention

 

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MX29LV160DBXHI-70G [16M-BIT [2M x 8 / 1M x 16] 3V SUPPLY FLASH MEMORY ]

other parts : MX29LV160DBGBI-70G  MX29LV160DBTI-70G  MX29LV160DBXBI-70G  MX29LV160DBXBI70G  MX29LV160DBXEI-70G  MX29LV160DBXEI70G  MX29LV160DBXGI-70G 

Macronix
Macronix International

GENERAL DESCRIPTION
MX29LV160DT/B is a 16Mbit flash memory that can be organized as 2Mbytes of 8 bits each or as 1M words of 16 bits each. These devices operate over a voltage range of 2.7V to 3.6V typically using a 3V power supply input. The memory array is divided into 32 equal 64 Kilo byte blocks. However, depending on the device being used as a Top-Boot or Bottom-Boot device. The outermost one sector at the top or at the bottom are respectively the boot blocks for this device.

 

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CAT28F512HI-12T [512K-Bit CMOS Flash Memory ]

other parts : CAT28F512  CAT28F512G-12T  CAT28F512G-15T  CAT28F512G-90T  CAT28F512GA-12T  CAT28F512GA-15T  CAT28F512GA-90T 

Catalyst
Catalyst Semiconductor => Onsemi

DESCRIPTION
The CAT28F512 is a high speed 64K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second.
It is pin and Read timing compatible with standard EPROM and EEPROM devices. Programming and Erase are performed through an operation and verify algorithm. The instructions are input via the I/O bus, using a two write cycle scheme. Address and Data are latched to free the I/O bus and address bus during the write operation.

FEATURES
■ Fast Read Access Time: 90/120/150 ns
■ Low Power CMOS Dissipation:
   –Active: 30 mA max (CMOS/TTL levels)
   –Standby: 1 mA max (TTL levels)
   –Standby: 100 µA max (CMOS levels)
■ High Speed Programming:
   –10 µs per byte
   –1 Sec Typ Chip Program
■ 12.0V ± 5% Programming and Erase Voltage
■ Electronic Signature
■ Commercial, Industrial and Automotive Temperature Ranges
■ Stop Timer for Program/Erase
■ On-Chip Address and Data Latches
■ JEDEC Standard Pinouts:
   –32-pin DIP
   –32-pin PLCC
   –32-pin TSOP ( 8 x 20)
■ 100,000 Program/Erase Cycles
■ 10 Year Data Retention
■ "Green" Package Options Available

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BS62LV1027HI-55 [VeryLow Power CMOS SRAM 128K X 8 bit ]

other parts : BS62LV1027H  BS62LV1027HC-55  BS62LV1027HC-70  BS62LV1027HI-70  BS62LV1027PC-55  BS62LV1027PC-70  BS62LV1027PI-55 

BSI
Brilliance Semiconductor

DESCRIPTION
The  BS62L V1027  is  a  high  performance,  very  low  power  CMOS Static  Random  Access  Memory  organized  as  131,072  by  8  bits  and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced  CMOS  technology  and  circuit  techniques  provide  both high  speed  and  low  power  features  with  typical  CMOS  standby current of 0.02uA at 3.0V/25OC and maximum access time of 55ns at 3.0V/85OC.

FEA TURES
WideVCC operation voltage : 2.4V ~ 5.5V
Very low powerconsumption:
    VCC = 3.0V  Operationcurrent :  18mA (Max.)  at 55ns
                                               2mA (Max.)  at 1MHz
                     Standby current :  0.02uA (Typ.)  at 25OC
   VCC = 5.0V  Operationcurrent :  47mA (Max.)  at 55ns
                                              10mA (Max.)  at 1MHz
                     Standby current :  0.4uA (Typ.)  at 25OC
Highspeed access time:
  -55  55ns (Max.) at VCC: 3.0~5.5V
  -70  70ns (Max.) at VCC: 2.7~5.5V
Automatic power down whenchip is deselected
Easy expansion with CE2, CE1 and OE options
Threestate outputs and TTLcompatible
Fully static operation
Data retentionsupply voltage as low as 1.5V

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CAT28F512HI-12 [512K-Bit CMOS Flash Memory ]

other parts : CAT28F512  CAT28F512G-12  CAT28F512G-12T  CAT28F512G-15  CAT28F512G-15T  CAT28F512G-90  CAT28F512G-90T 

ON-Semiconductor
ON Semiconductor

DESCRIPTION
The CAT28F512 is a high speed 64K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second.
It is pin and Read timing compatible with standard EPROM and EEPROM devices. Programming and Erase are performed through an operation and verify algorithm. The instructions are input via the I/O bus, using a
two write cycle scheme. Address and Data are latched to free the I/O bus and address bus during the write operation.
The CAT28F512 is manufactured using Catalyst’s advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles and has a data retention of 10 years. The device is available in JEDEC approved 32-pin plastic DIP, 32-pin PLCC or 32-pin TSOP packages.

FEATURES
■ Fast Read Access Time: 90/120/150 ns
■ Low Power CMOS Dissipation:
   –Active: 30 mA max (CMOS/TTL levels)
   –Standby: 1 mA max (TTL levels)
   –Standby: 100 µA max (CMOS levels)
■ High Speed Programming:
   –10 µs per byte
   –1 Sec Typ Chip Program
■ 12.0V ± 5% Programming and Erase Voltage
■ Electronic Signature
■ Commercial, Industrial and Automotive Temperature Ranges
■ Stop Timer for Program/Erase
■ On-Chip Address and Data Latches
■ JEDEC Standard Pinouts:
   –32-pin DIP
   –32-pin PLCC
   –32-pin TSOP ( 8 x 20)
■ 100,000 Program/Erase Cycles
■ 10 Year Data Retention
■ "Green" Package Options Available

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MX29LV160CBXHI-45G [SINGLE VOLTAGE 3V ONLY FLASH MEMORY ]

other parts : MX29LV160C  MX29LV160CB  MX29LV160CBGBC-45G  MX29LV160CBGBC-45Q  MX29LV160CBGBC-55G  MX29LV160CBGBC-55Q  MX29LV160CBGBC-70G 

MCNIX
Macronix International

The MX29LV160C T/B product family has been discontinued. The MX29LV160C T/B product family is not recommended for new designs. The MX29LV160D T/B family is the recommended replacement. Please refer to MX29LV160D T/B datasheet for full specifications and ordering information, or contact your local sales representative for additional support

FEATURES
GENERAL FEATURES
• Byte/Word mode switchable:
   - 524,288 x8 / 262,144 x16 (MX29LV400C)
   - 1,048,576 x8 / 524,288 x16 (MX29LV800C)
   - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)
• Sector Structure
   - 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x 1 64K-Byte x 7 (MX29LV400C), 64K-Byte x 15 (MX29LV800C), 64K-Byte x 31 (MX29LV160C)
   - Provides sector protect function to prevent program or erase operation in the protected sector
   - Provides chip unprotect function to allow code changing
   - Provides temporary sector unprotect function for code changing in previously protected sector
• Single Power Supply Operation
   - 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit : Vcc ≤ 1.4V
• Compatible with JEDEC standard
   - Pinout and software compatible to single power supply Flash
• Functional compatible with MX29LV400B/MX29LV800B/MX29LV160B device

PERFORMANCE
• High Performance
   - Fast access time: 45R (MX29LV400C and MX29LV800C only), 55R/70/90ns
   - Fast program time: 7us/word typical utilizing accelerate function
   - Fast erase time: 0.7s/sector, 15s/chip (typical, MX29LV160C)
• Low Power Consumption
   - Low active read current: 10mA (typical) at 5MHz
   - Low standby current: 200nA (typical)
• Minimum 100,000 erase/program cycle
• 20 years data retention

SOFTWARE FEATURES
• Erase Suspend/ Erase Resume
   - Suspends sector erase operation to read data from or program data to another sector which is not being erased
• Status Reply
   - Data# Polling & Toggle bits provide detection of program and erase operation completion
• Support Common Flash Interface (CFI)

HARDWARE FEATURES
• Ready/Busy# (RY/BY#) Output
   - Provides a hardware method of detecting program and erase operation completion
• Hardware Reset (RESET#) Input
   - Provides a hardware method to reset the internal state machine to read mode

PACKAGE
• 44-Pin SOP
• 48-Pin TSOP
• 48-Ball TFBGA
• 48-Ball LFBGA
• 48-Ball WFBGA
• 48-Ball XFLGA
• All devices are RoHS Compliant

 

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BS62LV4006HI-55 [VeryLow Power CMOS SRAM 512K X 8 bit ]

other parts : BS62LV4006  BS62LV4006DC  BS62LV4006DC-55  BS62LV4006DC-70  BS62LV4006DCG55  BS62LV4006DCG70  BS62LV4006DCP55 

BSI
Brilliance Semiconductor

DESCRIPTION
The BS62LV4006 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 by 8 bits and operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 0.25uA at 3.0V/25°C and maximum access time of 55ns at 3.0V/85°C.

FEATURES
• Wide VCC operation voltage : 2.4V ~ 5.5V
• Very low power consumption:
      VCC = 3.0V  Operationcurrent :  30mA (Max.)  at 55ns
                                                 2mA (Max.)  at 1MHz
      Standby current :  0.25uA (Typ.)  at 25OC
      VCC = 5.0V  Operationcurrent :  70mA (Max.)  at 55ns
                                                 10mA (Max.)  at 1MHz
       Standby current :  1.5uA (Typ.)  at 25OC
• Highspeed access time:
-55  55ns (Max.) at VCC=3.0~5.5V
-70  70ns (Max.) at VCC=2.7~5.5V
• Automatic power down whenchip is deselected

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AC-162EHI- [SPECIFICATIONS FOR LCD MODULE ]

other parts : AC-162E  AC-162EGA  AC-162EGA-  AC-162EGA-H  AC-162EGAB  AC-162EGAB-  AC-162EGAB-H 

Zettler
Zettler Electronics

FEATURES
(1) Display format : 16 characters × 2 lines
(2) Construction : HTN/STN LCD panel, Bezel, Zebra and PCB.
(3) Optional Array LED or EL back-light, white edge LED.
(4) Controller : KS0066U or Equivalent.
(5) 5V single power input. (Special request for 3.3V driving, built-in DC/DC converter.)
(6) Normal / Extended temperature type.
(7) Excellent LC : VOP maintains at 5V for whole temp. range, no need extra temp. compensation circuit.

 

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MX29LV400BHI-70 [4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY ]

other parts : MX29LV400B  MX29LV400BHI-90  MX29LV400BMC-55R  MX29LV400BMC-70  MX29LV400BMC-90  MX29LV400BMI-70  MX29LV400BMI-90 

Macronix
Macronix International

GENERAL DESCRIPTION
The MX29LV400T/B is a 4-mega bit Flash memory or ganized as 512K bytes of 8 bits or 256K words of 16 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29LV400T/B is packaged in 44-pin SOP, 48-pin TSOP and 48-ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers.

FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 524,288 x 8/262,144 x 16 switchable
• Single power supply operation
   - 3.0V only operation for read, erase and program operation
• Fast access time: 55R/70/90ns
• Low power consumption
   - 20mA maximum active current
   - 0.2uA typical standby current
• Command register architecture
   - Byte/word Programming (9us/11us typical)
   - Sector Erase (Sector structure 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x1, and 64K-Byte x7)
• Auto Erase (chip & sector) and Auto Program
   - Automatically erase any combination of sectors with Erase Suspend capability.
   - Automatically program and verify data at specified address
• Erase suspend/Erase Resume
   - Suspends sector erase operation to read data from, or program data to, any sector that is not being erased, then resumes the erase.
• Status Reply
   - Data polling & Toggle bit for detection of program and erase operation completion.
• Ready/Busy pin (RY/BY)
   - Provides a hardware method of detecting program or erase operation completion.
• Sector protection
   - Hardware method to disable any combination of sectors from program or erase operations
   - Tempoary sector unprotect allows code changes in previously locked sectors.
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
   - T = Top Boot Sector
   - B = Bottom Boot Sector
• Low VCC write inhibit is equal to or less than 2.3V
• Package type:
   - 44-pin SOP
   - 48-pin TSOP
   - 48-ball CSP
• Compatibility with JEDEC standard
   - Pinout and software compatible with single-power supply Flash

 

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