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Manufacturer Part no Description View
Infineon
Infineon Technologies
AUIRFR8405 AUTOMOTIVE GRADE

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional


other parts : AUIRFR8405TRL AUIRFU8405 
IR
International Rectifier
AUIRFU8405 AUTOMOTIVE GRADE

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional


other parts : AUIRFR8405 AUIRFR8405TR AUIRFR8405TRL AUIRFR8405TRR 
IR
International Rectifier
AUIRFBA1405 HEXFET® Power MOSFET

Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit com
bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other

IR
International Rectifier
AUIRFZ44NS HEXFET® Power MOSFET

Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.


other parts : AUIRFZ44NL 
IR
International Rectifier
AUIRF2805STRL HEXFET® Power MOSFET

Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.


other parts : AUIRF2805L AUIRF2805S AUIRF2805STRR 
IR
International Rectifier
AUIRF7309Q HEXFET Power MOSFET

Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit com bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.


other parts : AUIRF7309QTR 
Infineon
Infineon Technologies
AUIRFR8405TRL AUTOMOTIVE GRADE

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional


other parts : AUIRFU8405 AUIRFR8405 
LRC
Leshan Radio Company,Ltd
LIRFZ44N 55V N-Channel Mode MOSFET

VDS=55V RDS(ON), Vgs@10V, Ids@25A =17.5mΩ

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
 

IR
International Rectifier
AUIRF2805L HEXFET® Power MOSFET

Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.


other parts : AUIRF2805S AUIRF2805STRL AUIRF2805STRR 
IR
International Rectifier
AUIRFR8405TR AUTOMOTIVE GRADE

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional


other parts : AUIRFR8405 AUIRFR8405TRL AUIRFR8405TRR AUIRFU8405 

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