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IRFS65

  

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IRFS654 [250V N-Channel MOSFET ]

other parts : IRF654B  IRF654BFP001  IRFS654B 

Fairchild
Fairchild Semiconductor

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

Features
• 21A, 250V, RDS(on) = 0.14Ω @VGS = 10 V
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

 

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IRFS654A [N-Channel MOSFET Transistor ] Iscsemi
Inchange Semiconductor

DESCRIPTION
· Designed for use in switch mode power supplies and general purpose applications.

FEATURES
· Avalanche Rugged Technology
· Rugged Gate Oxide Technology
· Lower Input Capacitance
· Improved Gate Charge
· Extended Safe Operating Area

 

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IRFS650B [200V N-Channel MOSFET ]

other parts : IRF650  IRF650B 

Fairchild
Fairchild Semiconductor

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar, DMOS technology.This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features
• 28A, 200V, RDS(on)= 0.085Ω @VGS= 10 V
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 75 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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IRFS650A [250V N-Channel MOSFET ] Fairchild
Fairchild Semiconductor
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